@article{d43e8a55e3d940308bd4d9e44f5f5439,
title = "Strained-Si with carbon incorporation for MOSFET source/drain engineering",
abstract = " The carbon incorporation in strained-Si source/drain of MOSFET is demonstrated. The methylsilane (CH 3 SiH 3 ) is chosen as the carbon precursor to make high percentage of substitutional carbon, and less defects by interstitials and vacancies. The large D it at oxide/strained-Si:C interface degrades the expected carrier mobility enhancement, but improvement is observed after forming gas annealing. The strained-Si source/drain with carbon incorporation is not only being stressor but also lower R s , and make a potential candidate for future high-speed ballistic devices beyond 10 nm technology node.",
keywords = "Methysilane, Strain, Strained-Si:C",
author = "Lee, {M. H.} and Chang, {S. T.} and Lee, {S. W.} and Chen, {P. S.} and Shen, {K. W.} and Wang, {W. C.}",
note = "Funding Information: The authors are grateful for discussion with Prof. C.W. Liu, Graduate Institute of Electronics Engineering, National Taiwan University, and support by National Science Council (NSC 96-2112-M-003-013), National Nano Device Laboratories (NDL), and Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute (EOL/ITRI), Taiwan.",
year = "2008",
month = jul,
day = "30",
doi = "10.1016/j.apsusc.2008.02.179",
language = "???core.languages.en_GB???",
volume = "254",
pages = "6147--6150",
journal = "Applied Surface Science",
issn = "0169-4332",
number = "19",
}