Strain-compensated AlInGaAs-GaAsP superlattices for highly polarized electron emission

A. V. Subashiev, L. G. Gerchikov, Y. A. Mamaev, Y. P. Yashin, J. S. Roberts, D. A. Luh, T. Maruyama, J. E. Clendenin

研究成果: 雜誌貢獻期刊論文同行評審

19 引文 斯高帕斯(Scopus)

摘要

Spin-polarized electron emission from superlattice photocathodes developed with strain compensation is investigated. An opposite strain in the quantum well and barrier layers is accomplished using an InAlGaAsGaAsP superlattice structure. The measured values of maximum polarization and quantum yield for the structure with a 0.18 μm thick working layer are excellent results for a strained superlattice photocathode structure, demonstrating the high potential of strain compensation for future photocathode applications. An analysis of the photoemission spectra is used to estimate the parameters responsible for the polarization losses.

原文???core.languages.en_GB???
文章編號171911
頁(從 - 到)1-3
頁數3
期刊Applied Physics Letters
86
發行號17
DOIs
出版狀態已出版 - 25 4月 2005

指紋

深入研究「Strain-compensated AlInGaAs-GaAsP superlattices for highly polarized electron emission」主題。共同形成了獨特的指紋。

引用此