@article{2f671039a0474f9eac72b88294267abd,
title = "Strain-compensated AlInGaAs-GaAsP superlattices for highly polarized electron emission",
abstract = "Spin-polarized electron emission from superlattice photocathodes developed with strain compensation is investigated. An opposite strain in the quantum well and barrier layers is accomplished using an InAlGaAsGaAsP superlattice structure. The measured values of maximum polarization and quantum yield for the structure with a 0.18 μm thick working layer are excellent results for a strained superlattice photocathode structure, demonstrating the high potential of strain compensation for future photocathode applications. An analysis of the photoemission spectra is used to estimate the parameters responsible for the polarization losses.",
author = "Subashiev, {A. V.} and Gerchikov, {L. G.} and Mamaev, {Y. A.} and Yashin, {Y. P.} and Roberts, {J. S.} and Luh, {D. A.} and T. Maruyama and Clendenin, {J. E.}",
note = "Funding Information: This work was supported by CRDF under Grant No. RP1-2345-ST-02, by NATO under Grant No. PST.CLG 979966, by Russian Ministry of Industry, Science, and Technology under Contract Nos. 40.012.1.1.1152 and 40.072.1.1.1175, by UK EPSRC support for the National Centre for III-V Technologies at the University of Sheffield under Grant No. GR∕R65534∕01, and also supported in part by the U.S. Department of Energy under Contract No. DE-AC02-76SF00515.",
year = "2005",
month = apr,
day = "25",
doi = "10.1063/1.1920416",
language = "???core.languages.en_GB???",
volume = "86",
pages = "1--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "17",
}