Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures

Chii Chang Chen, Hui Wen Chuang, Gou Chung Chi, Chang Cheng Chuo, Jen Inn Chyi

研究成果: 雜誌貢獻期刊論文同行評審

30 引文 斯高帕斯(Scopus)

摘要

High-indium-content InGaN/GaN multiple-quantum-well structures grown by low-pressure metalorganic chemical-vapor deposition have been studied by photoluminescence and optical pumping at room temperature and 25 K. The results show that the annealing process reduces the compositional fluctuation of indium content owing to diffusion and can make the quantum-well structures more identical everywhere in the active region. Several stimulated-emission peaks were observed in the spectra of optical pumping in edge-emitting geometry. These peaks result from interband transitions between quantized levels in the quantum well. By solving the time-independent Schrödinger equation, the interband transitions in the quantum well corresponding to each stimulated-emission peak in optical-pumping spectra can be identified. The band offset parameter ΔΕC/ΔΕg = 0.38 was obtained.

原文???core.languages.en_GB???
頁(從 - 到)3758-3760
頁數3
期刊Applied Physics Letters
77
發行號23
DOIs
出版狀態已出版 - 4 12月 2000

指紋

深入研究「Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures」主題。共同形成了獨特的指紋。

引用此