Spin injection and spin loss in GaMnN/InGaN light-emitting diodes

I. A. Buyanova, M. Izadifard, W. M. Chen, J. Kim, F. Ren, G. Thaler, C. R. Abernathy, S. J. Pearton, C. H. Pan, G. H. Chen, J. H. Chyi, J. M. Zavada

研究成果: 書貢獻/報告類型會議論文篇章同行評審

5 引文 斯高帕斯(Scopus)

摘要

Electrical and optical spin injection efficiency of GaMnN/InGaN spin LEDs is evaluated. At room temperature, the spin LEDs are shown to exhibit negligible optical and electrical spin injection efficiency despite that the n-type GaMnN spin injector employed is ferromagnetic. On the other hand, carrier supply from GaMnN at low temperatures is accompanied by a reduction (by 1-5%) in optical polarization of the InGaN spin detector (SD) from its intrinsic values measured without carrier supply from GaMnN. This observation seems to indicate some degrees of spin injection from GaMnN with the spin orientation opposite to that of the lowest spin state of the SD. The very low degree of polarization, however, implies efficient spin loss during the spin injection process. From cw- and transient resonant optical orientation studies, the spin loss is attributed to fast spin relaxation within the InGaN spin detector.

原文???core.languages.en_GB???
主出版物標題PHYSICS OF SEMICONDUCTORS
主出版物子標題27th International Conference on the Physics of Semiconductors, ICPS-27
頁面1399-1400
頁數2
DOIs
出版狀態已出版 - 30 6月 2005
事件PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
持續時間: 26 7月 200430 7月 2004

出版系列

名字AIP Conference Proceedings
772
ISSN(列印)0094-243X
ISSN(電子)1551-7616

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???event.eventtypes.event.conference???PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
國家/地區United States
城市Flagstaff, AZ
期間26/07/0430/07/04

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