Spatial distribution of electrical properties in GaN p-i-n rectifiers

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; A. P. Zhang; F. Ren; S. J. Pearton; J. I. Chyi; T. E. Nee; C. M. Lee; C. C. Chuo

doi:10.1016/S0038-1101(00)00111-8

Spatial distribution of electrical properties in GaN p-i-n rectifiers

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. P. Zhang, F. Ren, S. J. Pearton, J. I. Chyi, T. E. Nee, C. M. Lee, C. C. Chuo

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

Scanning electron microscope studies using secondary electrons and electron beam induced current (EBIC) modes are reported for prototype p-i-n structures developed for high-power applications. It is observed that the diffusion length values in such devices are of the order of 0.5-0.8 μm and show considerable variations along the p-n junction plane as also is the case for the thickness of the space charge region near the p-i interface. Unidentified defects manifesting themselves even at low applied reverse biases and giving rise to a strong bright contrast in EBIC images of the cleaved diodes have been also detected. Their surface density has been estimated to be not lower than 10³ cm^-2.

原文	???core.languages.en_GB???
頁（從 - 到）	1591-1595
頁數	5
期刊	Solid-State Electronics
卷	44
發行號	9
DOIs	https://doi.org/10.1016/S0038-1101(00)00111-8
出版狀態	已出版 - 1 9月 2000

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10.1016/S0038-1101(00)00111-8

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@article{eac571f6c6cc4c19b0a6920a1d1117a3,

title = "Spatial distribution of electrical properties in GaN p-i-n rectifiers",

abstract = "Scanning electron microscope studies using secondary electrons and electron beam induced current (EBIC) modes are reported for prototype p-i-n structures developed for high-power applications. It is observed that the diffusion length values in such devices are of the order of 0.5-0.8 μm and show considerable variations along the p-n junction plane as also is the case for the thickness of the space charge region near the p-i interface. Unidentified defects manifesting themselves even at low applied reverse biases and giving rise to a strong bright contrast in EBIC images of the cleaved diodes have been also detected. Their surface density has been estimated to be not lower than 103 cm-2.",

author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Zhang, {A. P.} and F. Ren and Pearton, {S. J.} and Chyi, {J. I.} and Nee, {T. E.} and Lee, {C. M.} and Chuo, {C. C.}",

note = "Funding Information: The work at UF is partially supported by an NSF grant (DMR 9732865) and by DARPA/EPRI (MDA 972-98-1-006) monitored by ONR (J.C. Zolper). The work at IRM is partially supported by a grant from the US Civilian Research and Development Foundation (proposal 6029) and by a grant from the Russian Foundation for Fundamental Research (97-02-17076). ",

year = "2000",

month = sep,

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doi = "10.1016/S0038-1101(00)00111-8",

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TY - JOUR

T1 - Spatial distribution of electrical properties in GaN p-i-n rectifiers

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Zhang, A. P.

AU - Ren, F.

AU - Pearton, S. J.

AU - Chyi, J. I.

AU - Nee, T. E.

AU - Lee, C. M.

AU - Chuo, C. C.

N1 - Funding Information: The work at UF is partially supported by an NSF grant (DMR 9732865) and by DARPA/EPRI (MDA 972-98-1-006) monitored by ONR (J.C. Zolper). The work at IRM is partially supported by a grant from the US Civilian Research and Development Foundation (proposal 6029) and by a grant from the Russian Foundation for Fundamental Research (97-02-17076).

PY - 2000/9/1

Y1 - 2000/9/1

N2 - Scanning electron microscope studies using secondary electrons and electron beam induced current (EBIC) modes are reported for prototype p-i-n structures developed for high-power applications. It is observed that the diffusion length values in such devices are of the order of 0.5-0.8 μm and show considerable variations along the p-n junction plane as also is the case for the thickness of the space charge region near the p-i interface. Unidentified defects manifesting themselves even at low applied reverse biases and giving rise to a strong bright contrast in EBIC images of the cleaved diodes have been also detected. Their surface density has been estimated to be not lower than 103 cm-2.

AB - Scanning electron microscope studies using secondary electrons and electron beam induced current (EBIC) modes are reported for prototype p-i-n structures developed for high-power applications. It is observed that the diffusion length values in such devices are of the order of 0.5-0.8 μm and show considerable variations along the p-n junction plane as also is the case for the thickness of the space charge region near the p-i interface. Unidentified defects manifesting themselves even at low applied reverse biases and giving rise to a strong bright contrast in EBIC images of the cleaved diodes have been also detected. Their surface density has been estimated to be not lower than 103 cm-2.

UR - http://www.scopus.com/inward/record.url?scp=0034274296&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(00)00111-8

DO - 10.1016/S0038-1101(00)00111-8

M3 - 期刊論文

AN - SCOPUS:0034274296

SN - 0038-1101

VL - 44

SP - 1591

EP - 1595

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 9

ER -

Spatial distribution of electrical properties in GaN p-i-n rectifiers

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