Spatial distribution of electrical properties in GaN p-i-n rectifiers

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. P. Zhang, F. Ren, S. J. Pearton, J. I. Chyi, T. E. Nee, C. M. Lee, C. C. Chuo

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4 引文 斯高帕斯(Scopus)


Scanning electron microscope studies using secondary electrons and electron beam induced current (EBIC) modes are reported for prototype p-i-n structures developed for high-power applications. It is observed that the diffusion length values in such devices are of the order of 0.5-0.8 μm and show considerable variations along the p-n junction plane as also is the case for the thickness of the space charge region near the p-i interface. Unidentified defects manifesting themselves even at low applied reverse biases and giving rise to a strong bright contrast in EBIC images of the cleaved diodes have been also detected. Their surface density has been estimated to be not lower than 103 cm-2.

頁(從 - 到)1591-1595
期刊Solid-State Electronics
出版狀態已出版 - 1 9月 2000


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