Solid phase reactions between Fe thin films and Si-Ge layers on Si

C. H. Yu; Y. L. Chueh; S. W. Lee; S. L. Cheng; L. J. Chen; L. J. Chou; L. W. Cheng

doi:10.1016/j.tsf.2004.02.069

Solid phase reactions between Fe thin films and Si-Ge layers on Si

C. H. Yu, Y. L. Chueh, S. W. Lee, S. L. Cheng, L. J. Chen, L. J. Chou, L. W. Cheng

研究成果: 雜誌貢獻 › 會議論文 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

Solid phase reactions in Fe thin films on epi-Si_0.8Ge _0.2, poly-Si_0.7Ge_0.3, a-Si_0.8Ge _0.2, and a-Si_0.7Ge_0.3 layers on silicon have been investigated. The as-deposited samples were in situ annealed in the ultrahigh vacuum chamber at 400-800°C for 30 min. The island structure was found to cause the abrupt increase in the sheet resistance of the annealed Fe/SiGe samples at 700-800°C. The formation of FeSi islands containing a small amount of Ge is attributed to the preferential reactions of Fe with Si to Ge. As the annealing temperature was raised to 800°C, the Fe(Si _1-xGe_x) phase is the only phase found in the annealed Fe/epi-Si_0.8Ge_0.2 and Fe/poly-Si_0.7Ge _0.3 samples. On the other hand, at the annealing temperature above 700°C, the β-Fe(Si_1-xGe_x)₂ phase was observed in the annealed Fe/a-Si_0.8Ge_0.2 and Fe/a-Si _0.7Ge_0.3 but the Fe(Si_1-xGe_x) is still the dominant phase. The results indicate that the formation of Fe disilicide was retarded by the presence of Ge atoms.

原文	???core.languages.en_GB???
頁（從 - 到）	81-85
頁數	5
期刊	Thin Solid Films
卷	461
發行號	1
DOIs	https://doi.org/10.1016/j.tsf.2004.02.069
出版狀態	已出版 - 2 8月 2004
事件	Proceedings of Symposium on Semiconducting Silicides - Yokohama, Japan 持續時間: 8 10月 2003 → 13 10月 2003

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10.1016/j.tsf.2004.02.069

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title = "Solid phase reactions between Fe thin films and Si-Ge layers on Si",

abstract = "Solid phase reactions in Fe thin films on epi-Si0.8Ge 0.2, poly-Si0.7Ge0.3, a-Si0.8Ge 0.2, and a-Si0.7Ge0.3 layers on silicon have been investigated. The as-deposited samples were in situ annealed in the ultrahigh vacuum chamber at 400-800°C for 30 min. The island structure was found to cause the abrupt increase in the sheet resistance of the annealed Fe/SiGe samples at 700-800°C. The formation of FeSi islands containing a small amount of Ge is attributed to the preferential reactions of Fe with Si to Ge. As the annealing temperature was raised to 800°C, the Fe(Si 1-xGex) phase is the only phase found in the annealed Fe/epi-Si0.8Ge0.2 and Fe/poly-Si0.7Ge 0.3 samples. On the other hand, at the annealing temperature above 700°C, the β-Fe(Si1-xGex)2 phase was observed in the annealed Fe/a-Si0.8Ge0.2 and Fe/a-Si 0.7Ge0.3 but the Fe(Si1-xGex) is still the dominant phase. The results indicate that the formation of Fe disilicide was retarded by the presence of Ge atoms.",

keywords = "β-FeSi, Iron germanosilicide, SiGe, Solid phase reaction",

author = "Yu, {C. H.} and Chueh, {Y. L.} and Lee, {S. W.} and Cheng, {S. L.} and Chen, {L. J.} and Chou, {L. J.} and Cheng, {L. W.}",

note = "Funding Information: S.J.C. received funding from the University of Adelaide Summer Research Scholarship. B.W.M. is supported by a NHMRC Investigator grant (GNT1176437).; Proceedings of Symposium on Semiconducting Silicides ; Conference date: 08-10-2003 Through 13-10-2003",

year = "2004",

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doi = "10.1016/j.tsf.2004.02.069",

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volume = "461",

pages = "81--85",

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TY - JOUR

T1 - Solid phase reactions between Fe thin films and Si-Ge layers on Si

AU - Yu, C. H.

AU - Chueh, Y. L.

AU - Lee, S. W.

AU - Cheng, S. L.

AU - Chen, L. J.

AU - Chou, L. J.

AU - Cheng, L. W.

N1 - Funding Information: S.J.C. received funding from the University of Adelaide Summer Research Scholarship. B.W.M. is supported by a NHMRC Investigator grant (GNT1176437).

PY - 2004/8/2

Y1 - 2004/8/2

N2 - Solid phase reactions in Fe thin films on epi-Si0.8Ge 0.2, poly-Si0.7Ge0.3, a-Si0.8Ge 0.2, and a-Si0.7Ge0.3 layers on silicon have been investigated. The as-deposited samples were in situ annealed in the ultrahigh vacuum chamber at 400-800°C for 30 min. The island structure was found to cause the abrupt increase in the sheet resistance of the annealed Fe/SiGe samples at 700-800°C. The formation of FeSi islands containing a small amount of Ge is attributed to the preferential reactions of Fe with Si to Ge. As the annealing temperature was raised to 800°C, the Fe(Si 1-xGex) phase is the only phase found in the annealed Fe/epi-Si0.8Ge0.2 and Fe/poly-Si0.7Ge 0.3 samples. On the other hand, at the annealing temperature above 700°C, the β-Fe(Si1-xGex)2 phase was observed in the annealed Fe/a-Si0.8Ge0.2 and Fe/a-Si 0.7Ge0.3 but the Fe(Si1-xGex) is still the dominant phase. The results indicate that the formation of Fe disilicide was retarded by the presence of Ge atoms.

AB - Solid phase reactions in Fe thin films on epi-Si0.8Ge 0.2, poly-Si0.7Ge0.3, a-Si0.8Ge 0.2, and a-Si0.7Ge0.3 layers on silicon have been investigated. The as-deposited samples were in situ annealed in the ultrahigh vacuum chamber at 400-800°C for 30 min. The island structure was found to cause the abrupt increase in the sheet resistance of the annealed Fe/SiGe samples at 700-800°C. The formation of FeSi islands containing a small amount of Ge is attributed to the preferential reactions of Fe with Si to Ge. As the annealing temperature was raised to 800°C, the Fe(Si 1-xGex) phase is the only phase found in the annealed Fe/epi-Si0.8Ge0.2 and Fe/poly-Si0.7Ge 0.3 samples. On the other hand, at the annealing temperature above 700°C, the β-Fe(Si1-xGex)2 phase was observed in the annealed Fe/a-Si0.8Ge0.2 and Fe/a-Si 0.7Ge0.3 but the Fe(Si1-xGex) is still the dominant phase. The results indicate that the formation of Fe disilicide was retarded by the presence of Ge atoms.

KW - β-FeSi

KW - Iron germanosilicide

KW - SiGe

KW - Solid phase reaction

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DO - 10.1016/j.tsf.2004.02.069

M3 - 會議論文

AN - SCOPUS:2942679305

SN - 0040-6090

VL - 461

SP - 81

EP - 85

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

T2 - Proceedings of Symposium on Semiconducting Silicides

Y2 - 8 October 2003 through 13 October 2003

ER -

Solid phase reactions between Fe thin films and Si-Ge layers on Si

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