Solid phase reactions in Fe thin films on epi-Si0.8Ge 0.2, poly-Si0.7Ge0.3, a-Si0.8Ge 0.2, and a-Si0.7Ge0.3 layers on silicon have been investigated. The as-deposited samples were in situ annealed in the ultrahigh vacuum chamber at 400-800°C for 30 min. The island structure was found to cause the abrupt increase in the sheet resistance of the annealed Fe/SiGe samples at 700-800°C. The formation of FeSi islands containing a small amount of Ge is attributed to the preferential reactions of Fe with Si to Ge. As the annealing temperature was raised to 800°C, the Fe(Si 1-xGex) phase is the only phase found in the annealed Fe/epi-Si0.8Ge0.2 and Fe/poly-Si0.7Ge 0.3 samples. On the other hand, at the annealing temperature above 700°C, the β-Fe(Si1-xGex)2 phase was observed in the annealed Fe/a-Si0.8Ge0.2 and Fe/a-Si 0.7Ge0.3 but the Fe(Si1-xGex) is still the dominant phase. The results indicate that the formation of Fe disilicide was retarded by the presence of Ge atoms.
|頁（從 - 到）||81-85|
|期刊||Thin Solid Films|
|出版狀態||已出版 - 2 8月 2004|
|事件||Proceedings of Symposium on Semiconducting Silicides - Yokohama, Japan|
持續時間: 8 10月 2003 → 13 10月 2003