Solid phase reactions between Fe thin films and Si-Ge layers on Si

C. H. Yu, Y. L. Chueh, S. W. Lee, S. L. Cheng, L. J. Chen, L. J. Chou, L. W. Cheng

研究成果: 雜誌貢獻會議論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

Solid phase reactions in Fe thin films on epi-Si0.8Ge 0.2, poly-Si0.7Ge0.3, a-Si0.8Ge 0.2, and a-Si0.7Ge0.3 layers on silicon have been investigated. The as-deposited samples were in situ annealed in the ultrahigh vacuum chamber at 400-800°C for 30 min. The island structure was found to cause the abrupt increase in the sheet resistance of the annealed Fe/SiGe samples at 700-800°C. The formation of FeSi islands containing a small amount of Ge is attributed to the preferential reactions of Fe with Si to Ge. As the annealing temperature was raised to 800°C, the Fe(Si 1-xGex) phase is the only phase found in the annealed Fe/epi-Si0.8Ge0.2 and Fe/poly-Si0.7Ge 0.3 samples. On the other hand, at the annealing temperature above 700°C, the β-Fe(Si1-xGex)2 phase was observed in the annealed Fe/a-Si0.8Ge0.2 and Fe/a-Si 0.7Ge0.3 but the Fe(Si1-xGex) is still the dominant phase. The results indicate that the formation of Fe disilicide was retarded by the presence of Ge atoms.

原文???core.languages.en_GB???
頁(從 - 到)81-85
頁數5
期刊Thin Solid Films
461
發行號1
DOIs
出版狀態已出版 - 2 8月 2004
事件Proceedings of Symposium on Semiconducting Silicides - Yokohama, Japan
持續時間: 8 10月 200313 10月 2003

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