Site-controlled InGaAs quantum dots grown on a GaAs multi-faceted microstructure for single photon emissions

This study demonstrates the single photon emissions form site-controlled InGaAs quantum dots (QDs) grown on an apex plane of a GaAs multifaceted structure by pattern-growth techniques, multifaceted structure comprises the top (001) plane, and {111} and {011} side wall facets. The QDs formed on the apex plane rather than the side wall facet because the growth rate of apex plane is exceeded that of side wall facet. Microphotoluminescence (μPL), μPL excitation (μPLE) and theoretical calculations are adopted to estimate the growth rate of the {111} ({011}) facets as ∼82% (∼69%) lower than that of the (001) plane. Since the (001) plane growth rate is higher than that of the side wall facets, the QDs can be carefully controlled. This method is effective in the fabrication of a single photon source.