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摘要
P-N junction diodes with excellent rectifying characteristics were prepared by segregating the Ge nanocrystals of Si1−xGex thin films deposited by co-sputtering. The current-voltage characteristics in darkness and under illumination were studied. The correlation between the p-n junction performance and the microstructure of the films is discussed, and the rectifying property became stronger as the fraction of Ge in the Si1−xGex films increased. The optical bandgap can be tuned by controlling the grain size in Ge and SiGe nanocrystals. The graded structure of the Si1−xGex photodiode is proposed to widen the light absorption region. The concept can be used to design high-efficiency photodiodes.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 308-311 |
頁數 | 4 |
期刊 | Materials Letters |
卷 | 184 |
DOIs | |
出版狀態 | 已出版 - 1 12月 2016 |
指紋
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