SiSiGe-based edge-coupled photodiode with partially p-doped photoabsorption layer for high responsivity and high-power performance

J. W. Shi, P. H. Chiu, F. H. Huang, Y. S. Wu, Ja Yu Lu, C. K. Sun, C. W. Liu, P. S. Chen

研究成果: 雜誌貢獻期刊論文同行評審

6 引文 斯高帕斯(Scopus)

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Engineering