Single-crystal GaN/Gd2O3/GaN heterostructure

M. Hong, J. Kwo, S. N.G. Chu, J. P. Mannaerts, A. R. Kortan, H. M. Ng, A. Y. Cho, K. A. Anselm, C. M. Lee, J. I. Chyi

研究成果: 雜誌貢獻會議論文同行評審

35 引文 斯高帕斯(Scopus)

摘要

The heteroepitaxial growth of single-crystal rare earth oxide films on single-crystal gallium nitride (GaN) films was investigated. The epitaxial overgrowth of single crystal GaN films on the rare earth oxide films was also examined. A sixfold symmetry in the in-plane epitaxy was observed using reflection high-energy electron diffraction. The single-crystal oxide films were found to be the high temperature hexagonal phases of the sesquioxides. The crystallographic hexagonal close-packed (hcp) structures of both layers of GaN were also investigated.

原文???core.languages.en_GB???
頁(從 - 到)1274-1277
頁數4
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
20
發行號3
DOIs
出版狀態已出版 - 5月 2002
事件20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States
持續時間: 1 10月 20013 10月 2001

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