Single-crystal GaN/Gd2O3/GaN heterostructure

M. Hong; J. Kwo; S. N.G. Chu; J. P. Mannaerts; A. R. Kortan; H. M. Ng; A. Y. Cho; K. A. Anselm; C. M. Lee; J. I. Chyi

doi:10.1116/1.1473178

Single-crystal GaN/Gd₂O₃/GaN heterostructure

M. Hong, J. Kwo, S. N.G. Chu, J. P. Mannaerts, A. R. Kortan, H. M. Ng, A. Y. Cho, K. A. Anselm, C. M. Lee, J. I. Chyi

研究成果: 雜誌貢獻 › 會議論文 › 同行評審

36 引文斯高帕斯（Scopus）

摘要

The heteroepitaxial growth of single-crystal rare earth oxide films on single-crystal gallium nitride (GaN) films was investigated. The epitaxial overgrowth of single crystal GaN films on the rare earth oxide films was also examined. A sixfold symmetry in the in-plane epitaxy was observed using reflection high-energy electron diffraction. The single-crystal oxide films were found to be the high temperature hexagonal phases of the sesquioxides. The crystallographic hexagonal close-packed (hcp) structures of both layers of GaN were also investigated.

原文	???core.languages.en_GB???
頁（從 - 到）	1274-1277
頁數	4
期刊	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
卷	20
發行號	3
DOIs	https://doi.org/10.1116/1.1473178
出版狀態	已出版 - 5月 2002
事件	20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States 持續時間: 1 10月 2001 → 3 10月 2001

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10.1116/1.1473178

引用此

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title = "Single-crystal GaN/Gd2O3/GaN heterostructure",

abstract = "The heteroepitaxial growth of single-crystal rare earth oxide films on single-crystal gallium nitride (GaN) films was investigated. The epitaxial overgrowth of single crystal GaN films on the rare earth oxide films was also examined. A sixfold symmetry in the in-plane epitaxy was observed using reflection high-energy electron diffraction. The single-crystal oxide films were found to be the high temperature hexagonal phases of the sesquioxides. The crystallographic hexagonal close-packed (hcp) structures of both layers of GaN were also investigated.",

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TY - JOUR

T1 - Single-crystal GaN/Gd2O3/GaN heterostructure

AU - Hong, M.

AU - Kwo, J.

AU - Chu, S. N.G.

AU - Mannaerts, J. P.

AU - Kortan, A. R.

AU - Ng, H. M.

AU - Cho, A. Y.

AU - Anselm, K. A.

AU - Lee, C. M.

AU - Chyi, J. I.

PY - 2002/5

Y1 - 2002/5

N2 - The heteroepitaxial growth of single-crystal rare earth oxide films on single-crystal gallium nitride (GaN) films was investigated. The epitaxial overgrowth of single crystal GaN films on the rare earth oxide films was also examined. A sixfold symmetry in the in-plane epitaxy was observed using reflection high-energy electron diffraction. The single-crystal oxide films were found to be the high temperature hexagonal phases of the sesquioxides. The crystallographic hexagonal close-packed (hcp) structures of both layers of GaN were also investigated.

AB - The heteroepitaxial growth of single-crystal rare earth oxide films on single-crystal gallium nitride (GaN) films was investigated. The epitaxial overgrowth of single crystal GaN films on the rare earth oxide films was also examined. A sixfold symmetry in the in-plane epitaxy was observed using reflection high-energy electron diffraction. The single-crystal oxide films were found to be the high temperature hexagonal phases of the sesquioxides. The crystallographic hexagonal close-packed (hcp) structures of both layers of GaN were also investigated.

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DO - 10.1116/1.1473178

M3 - 會議論文

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SN - 1071-1023

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EP - 1277

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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T2 - 20th North American Conference on Molecular Beam Epitaxy

Y2 - 1 October 2001 through 3 October 2001

ER -

Single-crystal GaN/Gd2O3/GaN heterostructure

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Single-crystal GaN/Gd₂O₃/GaN heterostructure