The heteroepitaxial growth of single-crystal rare earth oxide films on single-crystal gallium nitride (GaN) films was investigated. The epitaxial overgrowth of single crystal GaN films on the rare earth oxide films was also examined. A sixfold symmetry in the in-plane epitaxy was observed using reflection high-energy electron diffraction. The single-crystal oxide films were found to be the high temperature hexagonal phases of the sesquioxides. The crystallographic hexagonal close-packed (hcp) structures of both layers of GaN were also investigated.
|頁（從 - 到）||1274-1277|
|期刊||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|出版狀態||已出版 - 5月 2002|
|事件||20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States|
持續時間: 1 10月 2001 → 3 10月 2001