Simulation of focusing field emission devices

Y. C. Lan; J. T. Lai; S. H. Chen; W. C. Wang; C. H. Tsai; K. L. Tsai; C. Y. Sheu

doi:10.1116/1.591296

Simulation of focusing field emission devices

Y. C. Lan, J. T. Lai, S. H. Chen, W. C. Wang, C. H. Tsai, K. L. Tsai, C. Y. Sheu

物理學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

12 引文斯高帕斯（Scopus）

摘要

The different focusing structures are simulated by the MAGIC particle-on-cell code cell program. The normal devices without focusing structures are also studied for comparison. The narrow or wide gate width means that the simulated outer gate width does not extend or extends to the simulation boundary. The voltages applied on the cathode electrode, the gate electrode, and the focus electrode are 0, 80, and 0 V, respectively. An anode plate with 4 kV is placed 1 mm away from and parallel to the cathode plate.

原文	???core.languages.en_GB???
頁（從 - 到）	911-913
頁數	3
期刊	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
卷	18
發行號	2
DOIs	https://doi.org/10.1116/1.591296
出版狀態	已出版 - 3月 2000

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10.1116/1.591296

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AU - Lan, Y. C.

AU - Lai, J. T.

AU - Chen, S. H.

AU - Wang, W. C.

AU - Tsai, C. H.

AU - Tsai, K. L.

AU - Sheu, C. Y.

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N2 - The different focusing structures are simulated by the MAGIC particle-on-cell code cell program. The normal devices without focusing structures are also studied for comparison. The narrow or wide gate width means that the simulated outer gate width does not extend or extends to the simulation boundary. The voltages applied on the cathode electrode, the gate electrode, and the focus electrode are 0, 80, and 0 V, respectively. An anode plate with 4 kV is placed 1 mm away from and parallel to the cathode plate.

AB - The different focusing structures are simulated by the MAGIC particle-on-cell code cell program. The normal devices without focusing structures are also studied for comparison. The narrow or wide gate width means that the simulated outer gate width does not extend or extends to the simulation boundary. The voltages applied on the cathode electrode, the gate electrode, and the focus electrode are 0, 80, and 0 V, respectively. An anode plate with 4 kV is placed 1 mm away from and parallel to the cathode plate.

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SN - 1071-1023

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Simulation of focusing field emission devices

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