Simulation of focusing field emission devices

Y. C. Lan, J. T. Lai, S. H. Chen, W. C. Wang, C. H. Tsai, K. L. Tsai, C. Y. Sheu

研究成果: 雜誌貢獻期刊論文同行評審

12 引文 斯高帕斯(Scopus)

摘要

The different focusing structures are simulated by the MAGIC particle-on-cell code cell program. The normal devices without focusing structures are also studied for comparison. The narrow or wide gate width means that the simulated outer gate width does not extend or extends to the simulation boundary. The voltages applied on the cathode electrode, the gate electrode, and the focus electrode are 0, 80, and 0 V, respectively. An anode plate with 4 kV is placed 1 mm away from and parallel to the cathode plate.

原文???core.languages.en_GB???
頁(從 - 到)911-913
頁數3
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
18
發行號2
DOIs
出版狀態已出版 - 3月 2000

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