Simulation of amorphous silicon thin-film transistor including adapted Gummel method

Yao Tsung Tsai, Li Chung Huang

研究成果: 雜誌貢獻期刊論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

This paper presents an adapted Gummel method (AGM) used in the two-dimensional device simulation of an amorphous-silicon (a-Si) thin-film transistor (TFT). Firstly, the AGM for amorphous silicon is developed by modifying the Gummel method (GM) for crystalline silicon. Secondly, the AGM is implemented into a two-dimensional device simulator for the simulation of a-Si TFTs. The simulation results show that the AGM converges well while the GM fails to converge for the simulation of a-Si TFTs. Hence, the AGM is a useful technique for the simulation and analysis of a-Si TFTs.

原文???core.languages.en_GB???
頁(從 - 到)3-11
頁數9
期刊International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
10
發行號1
DOIs
出版狀態已出版 - 1月 1997

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