Simulation and fabrication of high voltage AlGaN/GaN based Schottky diodes with field plate edge termination

K. Remashan, Wen Pin Huang, Jen Inn Chyi

研究成果: 雜誌貢獻期刊論文同行評審

15 引文 斯高帕斯(Scopus)

摘要

In this paper, we report the breakdown voltage (BV) of AlGaN/GaN based Schottky diodes with field plate edge termination. Simulation and fabrication of AlGaN/GaN Schottky diodes were carried out. The simulations were performed using the commercial 2-D device simulator DESSIS. From the simulations, it is found that for a given gate-Ohmic distance (Lgd) of 10 μm, 2DEG of 1 × 1013 cm-2 and field plate length (LFP) of 2.5 μm, highest BV can be obtained for a silicon nitride thickness of 8000 Å and this BV value is more than 5 times that for a Schottky diode without field plate. The breakdown voltages were also simulated for different field plate lengths. The BV values obtained on the fabricated Schottky diodes are compared with the simulation data and the experimental results follow the trend obtained from the simulation. Simulations were also carried out on a Schottky diode with field plate placed over a stepped insulator with Lgd = 10 μm, LFP = 5 μm and 2DEG = 1 × 1013 cm-2 and the obtained BV values are about 7 times that without field plate.

原文???core.languages.en_GB???
頁(從 - 到)2907-2915
頁數9
期刊Microelectronic Engineering
84
發行號12
DOIs
出版狀態已出版 - 12月 2007

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