Silicon sensors for the CMS preshower detector

P. Bloch, Y. H. Chang, A. E. Chen, A. Cheremukhin, N. Egorov, A. Go, S. Golubkov, I. Golutvin, S. R. Hou, K. Konjkov, Y. Kozlov, A. Kyriakis, W. T. Lin, D. Loukas, A. Markou, J. Mousa, A. Peisert, A. Sidorov, E. Tsoi, N. ZamiatinE. Zubarev

研究成果: 雜誌貢獻期刊論文同行評審

9 引文 斯高帕斯(Scopus)


This paper is a summary of a research and development programme, conducted during the past 3 years on the CMS Preshower silicon sensors to define the specifications. The main purpose was to study the radiation hardness of these devices resulting from the specific design (metal lines wider than the p+ implants) and the production technology, a deep n+ layer on the ohmic side. An acceptable noise and a uniform charge collection were guaranteed by an appropriate choice of the interstrip region width. About 65 sensors, of different designs and produced by six manufacturers, were irradiated with neutrons and protons and thoroughly tested before and after irradiation. The results of the tests and the final specifications are presented.

頁(從 - 到)265-277
期刊Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
出版狀態已出版 - 1 3月 2002


深入研究「Silicon sensors for the CMS preshower detector」主題。共同形成了獨特的指紋。