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Silicon Quantum Dots with Large Stokes Shift and Long Photoluminescence Lifetime for Energy and Biomedical Applications
Chang Ching Tu
, Shanshan Han, Guo Chen, Wenzhao Yang, Hao Chung Kuo
電機工程學系
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Keyphrases
Biomedical Applications
100%
Energy Applications
100%
Silicon Quantum Dots (Si QDs)
100%
Large Stokes Shift
100%
Photoluminescence Lifetime
100%
Photoluminescence
14%
Optical Properties
14%
Fourier Transform Infrared Spectroscopy (FT-IR)
14%
Band Gap
14%
III-V
14%
Visible Photoluminescence
14%
Biocompatibility
14%
Visible Spectrum
14%
Photobleaching
14%
Surface Chemistry
14%
Radiative Recombination
14%
Organic Dyes
14%
Infrared Absorption
14%
Enlargement
14%
Absorption Peak
14%
Direct Band Gap
14%
Ultraviolet Range
14%
Optical Absorption Property
14%
Heavy Metal Toxicity
14%
Quantum Confinement Effect
14%
Porous Silicon
14%
All-silicon
14%
Surface Defect States
14%
II-VI
14%
Photoluminescent Quantum Yield
14%
Bulk Silicon
14%
Earth Abundance
14%
Engineering
Quantum Dot
100%
Biomedical Application
100%
Stokes Shift
100%
Band Gap
28%
Absorption Property
14%
Radiative Recombination
14%
Heavy Metal
14%
Infrared Absorption
14%
Light Absorption
14%
Quantum Yield
14%
Porous Silicon
14%
Bulk Silicon
14%
Quantum Confinement Effect
14%
Fourier Transform
14%
Surface Defect
14%
Material Science
Silicon
100%
Photoluminescence
100%
Quantum Dot
100%
Optical Property
14%
Biocompatibility
14%
Surface Defect
14%
Heavy Metal
14%
Porous Silicon
14%
Surface (Surface Science)
14%
Bulk Silicon
14%
Physics
Quantum Dot
100%
Photoluminescence
100%
Energy Gaps (Solid State)
28%
Surface Defect
14%
Electromagnetic Absorption
14%
Infrared Absorption
14%
Heavy Metal
14%
Biocompatibility
14%
Porous Silicon
14%
Optical Property
14%
Chemical Engineering
Heavy Metal
100%