摘要
A triple p-n junction Si photodetector using 0.25-μm standard CMOS process at 650-and 850-nm wavelengths is presented and investigated. Triple p-n junctions are formed vertically by n+-implant/p-well (N+/HVPW), p-well/n+-buried layer (HVPW/NBL), and n+-buried layer/p-substrate (NBL/P-sub) junctions to attain a wavelength-dependent response. The responsivity and pulse response were characterised in different bias schemes. Measured photocurrents from HVPW/NBL and NBL/P-sub junctions under reverse biasing and a floating electrode on N+-HVPW showed the smallest FWHM values. The.3 dB bandwidth of 1.9 GHz converted from pulse measurement is the highest result ever reported in 654-nm wavelength using standard CMOS technology. The proposed triple p-n junction Si photodetector with bias schemes shows combined excellent performance in 650-and 850-nm wavelengths.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 1707-1708 |
頁數 | 2 |
期刊 | Electronics Letters |
卷 | 52 |
發行號 | 20 |
DOIs | |
出版狀態 | 已出版 - 29 9月 2016 |