Silicide contacts for sub-0.25 μm devices

L. J. Chen, S. L. Cheng, S. M. Chang, Y. C. Peng, H. Y. Huang, L. W. Cheng

研究成果: 雜誌貢獻會議論文同行評審

2 引文 斯高帕斯(Scopus)

摘要

Low resistivity TiSi2, CoSi2 and NiSi are the three primary candidates for metal contacts in sub-0.25 μm devices. In the present paper, we review recent progress in the investigations of low-resistivity contacts, which include enhanced formation of C54-TiSi2 on (001)Si by tensile stress, high temperature sputtering, and interposing Mo or TiN layer improved thermal stability of C54-TiSi2 by the addition of N2 during Ti sputtering or N+ implantation in (001)Si, self-aligned formation of CoSi2 on the selective epitaxial growth silicon layer on (001)Si, effects of stress on the epitaxial growth of CoSi2 on (001)Si, improvement of thermal stability of CoSi2 by nitrogen ion implantation or high temperature sputtering, and improvement of thermal stability of NiSi by nitrogen ion implantation or compressive stress.

原文???core.languages.en_GB???
頁(從 - 到)123-134
頁數12
期刊Materials Research Society Symposium - Proceedings
564
DOIs
出版狀態已出版 - 1999
事件Proceedings of the 1999 MRS Spring Meeting - Symposium N: 'Advanced Interconnects and Contacts' - San Francisco, CA, United States
持續時間: 5 4月 19997 4月 1999

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