TY - JOUR
T1 - Silicide contacts for sub-0.25 μm devices
AU - Chen, L. J.
AU - Cheng, S. L.
AU - Chang, S. M.
AU - Peng, Y. C.
AU - Huang, H. Y.
AU - Cheng, L. W.
PY - 1999
Y1 - 1999
N2 - Low resistivity TiSi2, CoSi2 and NiSi are the three primary candidates for metal contacts in sub-0.25 μm devices. In the present paper, we review recent progress in the investigations of low-resistivity contacts, which include enhanced formation of C54-TiSi2 on (001)Si by tensile stress, high temperature sputtering, and interposing Mo or TiN layer improved thermal stability of C54-TiSi2 by the addition of N2 during Ti sputtering or N+ implantation in (001)Si, self-aligned formation of CoSi2 on the selective epitaxial growth silicon layer on (001)Si, effects of stress on the epitaxial growth of CoSi2 on (001)Si, improvement of thermal stability of CoSi2 by nitrogen ion implantation or high temperature sputtering, and improvement of thermal stability of NiSi by nitrogen ion implantation or compressive stress.
AB - Low resistivity TiSi2, CoSi2 and NiSi are the three primary candidates for metal contacts in sub-0.25 μm devices. In the present paper, we review recent progress in the investigations of low-resistivity contacts, which include enhanced formation of C54-TiSi2 on (001)Si by tensile stress, high temperature sputtering, and interposing Mo or TiN layer improved thermal stability of C54-TiSi2 by the addition of N2 during Ti sputtering or N+ implantation in (001)Si, self-aligned formation of CoSi2 on the selective epitaxial growth silicon layer on (001)Si, effects of stress on the epitaxial growth of CoSi2 on (001)Si, improvement of thermal stability of CoSi2 by nitrogen ion implantation or high temperature sputtering, and improvement of thermal stability of NiSi by nitrogen ion implantation or compressive stress.
UR - http://www.scopus.com/inward/record.url?scp=0033279348&partnerID=8YFLogxK
U2 - 10.1557/proc-564-123
DO - 10.1557/proc-564-123
M3 - 會議論文
AN - SCOPUS:0033279348
SN - 0272-9172
VL - 564
SP - 123
EP - 134
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Proceedings of the 1999 MRS Spring Meeting - Symposium N: 'Advanced Interconnects and Contacts'
Y2 - 5 April 1999 through 7 April 1999
ER -