SiGe nanorings by ultrahigh vacuum chemical vapor deposition

C. H. Lee; Y. Y. Shen; C. W. Liu; S. W. Lee; B. H. Lin; C. H. Hsu

doi:10.1063/1.3116619

SiGe nanorings by ultrahigh vacuum chemical vapor deposition

C. H. Lee, Y. Y. Shen, C. W. Liu, S. W. Lee, B. H. Lin, C. H. Hsu

材料科學與工程研究所

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

16 引文斯高帕斯（Scopus）

摘要

Formation of SiGe nanorings from Si capped Si_0.1 Ge _0.9 quantum dots (QDs) grown at 500 °C by ultrahigh vacuum chemical vapor deposition was investigated. SiGe nanorings have average diameter, width, and depth of 185, 30, and 9 nm, respectively. Based on both Raman and x-ray diffraction results, the formation of SiGe nanorings can be attributed to Ge outdiffusion from central SiGe QDs during in situ annealing. Moreover, the depth of SiGe nanorings can be controlled by Si cap thickness. The Si cap is essential for nanorings formation.

原文	???core.languages.en_GB???
文章編號	141909
期刊	Applied Physics Letters
卷	94
發行號	14
DOIs	https://doi.org/10.1063/1.3116619
出版狀態	已出版 - 2009

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10.1063/1.3116619

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title = "SiGe nanorings by ultrahigh vacuum chemical vapor deposition",

abstract = "Formation of SiGe nanorings from Si capped Si0.1 Ge 0.9 quantum dots (QDs) grown at 500 °C by ultrahigh vacuum chemical vapor deposition was investigated. SiGe nanorings have average diameter, width, and depth of 185, 30, and 9 nm, respectively. Based on both Raman and x-ray diffraction results, the formation of SiGe nanorings can be attributed to Ge outdiffusion from central SiGe QDs during in situ annealing. Moreover, the depth of SiGe nanorings can be controlled by Si cap thickness. The Si cap is essential for nanorings formation.",

author = "Lee, {C. H.} and Shen, {Y. Y.} and Liu, {C. W.} and Lee, {S. W.} and Lin, {B. H.} and Hsu, {C. H.}",

note = "Funding Information: This work was supported by National Science Council of Republic of China under Grant No. 95-2221-E-002-370. ",

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T1 - SiGe nanorings by ultrahigh vacuum chemical vapor deposition

AU - Lee, C. H.

AU - Shen, Y. Y.

AU - Liu, C. W.

AU - Lee, S. W.

AU - Lin, B. H.

AU - Hsu, C. H.

N1 - Funding Information: This work was supported by National Science Council of Republic of China under Grant No. 95-2221-E-002-370.

PY - 2009

Y1 - 2009

N2 - Formation of SiGe nanorings from Si capped Si0.1 Ge 0.9 quantum dots (QDs) grown at 500 °C by ultrahigh vacuum chemical vapor deposition was investigated. SiGe nanorings have average diameter, width, and depth of 185, 30, and 9 nm, respectively. Based on both Raman and x-ray diffraction results, the formation of SiGe nanorings can be attributed to Ge outdiffusion from central SiGe QDs during in situ annealing. Moreover, the depth of SiGe nanorings can be controlled by Si cap thickness. The Si cap is essential for nanorings formation.

AB - Formation of SiGe nanorings from Si capped Si0.1 Ge 0.9 quantum dots (QDs) grown at 500 °C by ultrahigh vacuum chemical vapor deposition was investigated. SiGe nanorings have average diameter, width, and depth of 185, 30, and 9 nm, respectively. Based on both Raman and x-ray diffraction results, the formation of SiGe nanorings can be attributed to Ge outdiffusion from central SiGe QDs during in situ annealing. Moreover, the depth of SiGe nanorings can be controlled by Si cap thickness. The Si cap is essential for nanorings formation.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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SiGe nanorings by ultrahigh vacuum chemical vapor deposition

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