SiGe nanorings by ultrahigh vacuum chemical vapor deposition

C. H. Lee, Y. Y. Shen, C. W. Liu, S. W. Lee, B. H. Lin, C. H. Hsu

研究成果: 雜誌貢獻期刊論文同行評審

16 引文 斯高帕斯(Scopus)

摘要

Formation of SiGe nanorings from Si capped Si0.1 Ge 0.9 quantum dots (QDs) grown at 500 °C by ultrahigh vacuum chemical vapor deposition was investigated. SiGe nanorings have average diameter, width, and depth of 185, 30, and 9 nm, respectively. Based on both Raman and x-ray diffraction results, the formation of SiGe nanorings can be attributed to Ge outdiffusion from central SiGe QDs during in situ annealing. Moreover, the depth of SiGe nanorings can be controlled by Si cap thickness. The Si cap is essential for nanorings formation.

原文???core.languages.en_GB???
文章編號141909
期刊Applied Physics Letters
94
發行號14
DOIs
出版狀態已出版 - 2009

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