摘要
A SiGe BiCMOS power amplifier (PA) with a switchable output matching network (OMN) is designed and measured. A MOS switch is incorporated in the OMN of the PA. According to the state of the switch, the proposed PA can be operated in either the high-power (HP) or low-power (LP) modes. In the HP mode, the measured P1dB is 20.1 dBm and PAE is 23.1%. When the PA is switched from the HP mode to the LP mode, the efficiency is improved. The reduction in power consumption is more than 20% when the output power is 17.8 dBm.
原文 | ???core.languages.en_GB??? |
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文章編號 | 7129737 |
頁(從 - 到) | 62-64 |
頁數 | 3 |
期刊 | IEEE Radio and Wireless Symposium, RWS |
卷 | 2015-June |
發行號 | June |
DOIs | |
出版狀態 | 已出版 - 19 6月 2015 |
事件 | 2015 IEEE Radio and Wireless Symposium, RWS 2015 - RWW 2015 - San Diego, United States 持續時間: 25 1月 2015 → 28 1月 2015 |