A SiGe BiCMOS power amplifier (PA) with a switchable output matching network (OMN) is designed and measured. A MOS switch is incorporated in the OMN of the PA. According to the state of the switch, the proposed PA can be operated in either the high-power (HP) or low-power (LP) modes. In the HP mode, the measured P1dB is 20.1 dBm and PAE is 23.1%. When the PA is switched from the HP mode to the LP mode, the efficiency is improved. The reduction in power consumption is more than 20% when the output power is 17.8 dBm.
|頁（從 - 到）||62-64|
|期刊||IEEE Radio and Wireless Symposium, RWS|
|出版狀態||已出版 - 19 6月 2015|
|事件||2015 IEEE Radio and Wireless Symposium, RWS 2015 - RWW 2015 - San Diego, United States|
持續時間: 25 1月 2015 → 28 1月 2015