SiC structural characterization by non destructive near-field microscopy techniques

Kuan Ting Wu; Enora Vuillermet; Elise Usureau; Youssef El-Helou; Michel Kazan; Wei Yen Woon; Mihai Lazar; Aurelien Bruyant

doi:10.1109/CAS56377.2022.9934358

SiC structural characterization by non destructive near-field microscopy techniques

Kuan Ting Wu, Enora Vuillermet, Elise Usureau, Youssef El-Helou, Michel Kazan, Wei Yen Woon, Mihai Lazar, Aurelien Bruyant

物理學系

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

SiC sputtered and e-beam evaporated layers have been deposited on 4H-SiC substrates. Recrystallization has been tried by high temperature annealing with two plateaus at 1400°C and 1700°C. The crystallinity was systematically investigated by non destructive near-field microscopy techniques, particularly adapted to the thin thickness of our layers. Good recrystallization is confirmed only on the e-beam evaporated layers and after the higher annealing plateau by preserving 4H substrate polytype.

原文	???core.languages.en_GB???
主出版物標題	2022 International Semiconductor Conference, CAS 2022
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	73-76
頁數	4
ISBN（電子）	9781665452557
DOIs	https://doi.org/10.1109/CAS56377.2022.9934358
出版狀態	已出版 - 2022
事件	2022 International Semiconductor Conference, CAS 2022 - Poiana Brasov, Romania 持續時間: 12 10月 2022 → 14 10月 2022

出版系列

名字	Proceedings of the International Semiconductor Conference, CAS
卷	2022-October

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???	2022 International Semiconductor Conference, CAS 2022
國家/地區	Romania
城市	Poiana Brasov
期間	12/10/22 → 14/10/22

存取文件

10.1109/CAS56377.2022.9934358

引用此

Wu, K. T., Vuillermet, E., Usureau, E., El-Helou, Y., Kazan, M., Woon, W. Y., Lazar, M., & Bruyant, A. (2022). SiC structural characterization by non destructive near-field microscopy techniques. 於 2022 International Semiconductor Conference, CAS 2022 (頁 73-76). (Proceedings of the International Semiconductor Conference, CAS; 卷 2022-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CAS56377.2022.9934358

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title = "SiC structural characterization by non destructive near-field microscopy techniques",

abstract = "SiC sputtered and e-beam evaporated layers have been deposited on 4H-SiC substrates. Recrystallization has been tried by high temperature annealing with two plateaus at 1400°C and 1700°C. The crystallinity was systematically investigated by non destructive near-field microscopy techniques, particularly adapted to the thin thickness of our layers. Good recrystallization is confirmed only on the e-beam evaporated layers and after the higher annealing plateau by preserving 4H substrate polytype.",

keywords = "4H, PiFM, a-SiC, s-SNOM, μRaman",

author = "Wu, {Kuan Ting} and Enora Vuillermet and Elise Usureau and Youssef El-Helou and Michel Kazan and Woon, {Wei Yen} and Mihai Lazar and Aurelien Bruyant",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Semiconductor Conference, CAS 2022 ; Conference date: 12-10-2022 Through 14-10-2022",

year = "2022",

doi = "10.1109/CAS56377.2022.9934358",

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series = "Proceedings of the International Semiconductor Conference, CAS",

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Wu, KT, Vuillermet, E, Usureau, E, El-Helou, Y, Kazan, M, Woon, WY, Lazar, M & Bruyant, A 2022, SiC structural characterization by non destructive near-field microscopy techniques. 於 2022 International Semiconductor Conference, CAS 2022. Proceedings of the International Semiconductor Conference, CAS, 卷 2022-October, Institute of Electrical and Electronics Engineers Inc., 頁 73-76, 2022 International Semiconductor Conference, CAS 2022, Poiana Brasov, Romania, 12/10/22. https://doi.org/10.1109/CAS56377.2022.9934358

SiC structural characterization by non destructive near-field microscopy techniques. / Wu, Kuan Ting; Vuillermet, Enora; Usureau, Elise 等.
2022 International Semiconductor Conference, CAS 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 73-76 (Proceedings of the International Semiconductor Conference, CAS; 卷 2022-October).

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

TY - GEN

T1 - SiC structural characterization by non destructive near-field microscopy techniques

AU - Wu, Kuan Ting

AU - Vuillermet, Enora

AU - Usureau, Elise

AU - El-Helou, Youssef

AU - Kazan, Michel

AU - Woon, Wei Yen

AU - Lazar, Mihai

AU - Bruyant, Aurelien

PY - 2022

Y1 - 2022

N2 - SiC sputtered and e-beam evaporated layers have been deposited on 4H-SiC substrates. Recrystallization has been tried by high temperature annealing with two plateaus at 1400°C and 1700°C. The crystallinity was systematically investigated by non destructive near-field microscopy techniques, particularly adapted to the thin thickness of our layers. Good recrystallization is confirmed only on the e-beam evaporated layers and after the higher annealing plateau by preserving 4H substrate polytype.

AB - SiC sputtered and e-beam evaporated layers have been deposited on 4H-SiC substrates. Recrystallization has been tried by high temperature annealing with two plateaus at 1400°C and 1700°C. The crystallinity was systematically investigated by non destructive near-field microscopy techniques, particularly adapted to the thin thickness of our layers. Good recrystallization is confirmed only on the e-beam evaporated layers and after the higher annealing plateau by preserving 4H substrate polytype.

KW - 4H

KW - PiFM

KW - a-SiC

KW - s-SNOM

KW - μRaman

UR - http://www.scopus.com/inward/record.url?scp=85142456556&partnerID=8YFLogxK

U2 - 10.1109/CAS56377.2022.9934358

DO - 10.1109/CAS56377.2022.9934358

M3 - 會議論文篇章

AN - SCOPUS:85142456556

T3 - Proceedings of the International Semiconductor Conference, CAS

SP - 73

EP - 76

BT - 2022 International Semiconductor Conference, CAS 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 International Semiconductor Conference, CAS 2022

Y2 - 12 October 2022 through 14 October 2022

ER -

Wu KT, Vuillermet E, Usureau E, El-Helou Y, Kazan M, Woon WY 等. SiC structural characterization by non destructive near-field microscopy techniques. 於 2022 International Semiconductor Conference, CAS 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 73-76. (Proceedings of the International Semiconductor Conference, CAS). doi: 10.1109/CAS56377.2022.9934358

SiC structural characterization by non destructive near-field microscopy techniques

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