SiC-based gas sensor development

Gary W. Hunter, Philip G. Neudeck, M. Gray, D. Androjna, Liang Yu Chen, Richard W. Hoffman, C. C. Liu, Q. H. Wu

研究成果: 雜誌貢獻會議論文同行評審

29 引文 斯高帕斯(Scopus)


Silicon carbide based Schottky diode gas sensors are being developed for applications such as emission measurements and leak detection. The effects of the geometry of the tin oxide film in a Pd/SnO2/SiC structure will be discussed as well as improvements in packaging SiC-based sensors. It is concluded that there is considerable versatility in the formation of SiC-based Schottky diode gas sensing structures which will potentially allow the fabrication of a SiC-based gas sensor array for a variety of gases and temperatures.

頁(從 - 到)II/-
期刊Materials Science Forum
出版狀態已出版 - 2000
事件ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
持續時間: 10 10月 199915 10月 1999


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