SiC-based gas sensor development

Gary W. Hunter; Philip G. Neudeck; M. Gray; D. Androjna; Liang Yu Chen; Richard W. Hoffman; C. C. Liu; Q. H. Wu

SiC-based gas sensor development

Gary W. Hunter, Philip G. Neudeck, M. Gray, D. Androjna, Liang Yu Chen, Richard W. Hoffman, C. C. Liu, Q. H. Wu

材料科學與工程研究所

研究成果: 雜誌貢獻 › 會議論文 › 同行評審

29 引文斯高帕斯（Scopus）

摘要

Silicon carbide based Schottky diode gas sensors are being developed for applications such as emission measurements and leak detection. The effects of the geometry of the tin oxide film in a Pd/SnO₂/SiC structure will be discussed as well as improvements in packaging SiC-based sensors. It is concluded that there is considerable versatility in the formation of SiC-based Schottky diode gas sensing structures which will potentially allow the fabrication of a SiC-based gas sensor array for a variety of gases and temperatures.

原文	???core.languages.en_GB???
頁（從 - 到）	II/-
期刊	Materials Science Forum
卷	338
出版狀態	已出版 - 2000
事件	ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA 持續時間: 10 10月 1999 → 15 10月 1999

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abstract = "Silicon carbide based Schottky diode gas sensors are being developed for applications such as emission measurements and leak detection. The effects of the geometry of the tin oxide film in a Pd/SnO2/SiC structure will be discussed as well as improvements in packaging SiC-based sensors. It is concluded that there is considerable versatility in the formation of SiC-based Schottky diode gas sensing structures which will potentially allow the fabrication of a SiC-based gas sensor array for a variety of gases and temperatures.",

author = "Hunter, {Gary W.} and Neudeck, {Philip G.} and M. Gray and D. Androjna and Chen, {Liang Yu} and Hoffman, {Richard W.} and Liu, {C. C.} and Wu, {Q. H.}",

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TY - JOUR

T1 - SiC-based gas sensor development

AU - Hunter, Gary W.

AU - Neudeck, Philip G.

AU - Gray, M.

AU - Androjna, D.

AU - Chen, Liang Yu

AU - Hoffman, Richard W.

AU - Liu, C. C.

AU - Wu, Q. H.

PY - 2000

Y1 - 2000

N2 - Silicon carbide based Schottky diode gas sensors are being developed for applications such as emission measurements and leak detection. The effects of the geometry of the tin oxide film in a Pd/SnO2/SiC structure will be discussed as well as improvements in packaging SiC-based sensors. It is concluded that there is considerable versatility in the formation of SiC-based Schottky diode gas sensing structures which will potentially allow the fabrication of a SiC-based gas sensor array for a variety of gases and temperatures.

AB - Silicon carbide based Schottky diode gas sensors are being developed for applications such as emission measurements and leak detection. The effects of the geometry of the tin oxide film in a Pd/SnO2/SiC structure will be discussed as well as improvements in packaging SiC-based sensors. It is concluded that there is considerable versatility in the formation of SiC-based Schottky diode gas sensing structures which will potentially allow the fabrication of a SiC-based gas sensor array for a variety of gases and temperatures.

UR - http://www.scopus.com/inward/record.url?scp=0343006655&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:0343006655

SN - 0255-5476

VL - 338

SP - II/-

JO - Materials Science Forum

JF - Materials Science Forum

T2 - ICSCRM '99: The International Conference on Silicon Carbide and Related Materials

Y2 - 10 October 1999 through 15 October 1999

ER -

SiC-based gas sensor development

摘要

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