@article{9d97898c53334b30b901aa908925f6ef,
title = "Si and SiC layer transfer by high temperature hydrogen implantation and lower temperature layer splitting",
abstract = "High quality Si and SiC layers which were implanted by H at 400 and 800°C, respectively, were transferred onto an Si substrate and glass by wafer bonding and layer splitting at temperatures lower than the corresponding H0-implantation temperatures.",
author = "Tong, {Q. Y.} and Lee, {T. H.} and Huang, {L. J.} and Chao, {Y. L.} and U. G{\"o}sele",
year = "1998",
month = feb,
day = "19",
doi = "10.1049/el:19980295",
language = "???core.languages.en_GB???",
volume = "34",
pages = "407--408",
journal = "Electronics Letters",
issn = "0013-5194",
number = "4",
}