Sharpening Si nanocrystals on the bulk surface by nanoscale electrochemistry through controlling the hole current with the irradiation of near-infrared laser

C. C. Chiang, T. H. Lee

研究成果: 雜誌貢獻期刊論文同行評審

4 引文 斯高帕斯(Scopus)

摘要

Numerous Si nanocrystals on the bulk surface can be efficiently sharpened by a HF-based electrochemical etching with the irradiation of near-infrared (NIR) laser simultaneously. Under the NIR laser-irradiation, the electrons excited from the B-Si complex inhibited the growth of the anodized layer and promoted the formation of nanocrystals by controlling the number of holes that participate in anodization. The effect of NIR laser-irradiation enhanced the photoluminescence by 7-10 times as compared to that obtained when anodization was performed in the dark for growing a normal porous silicon. The transmission electron microscopy images showed clearly that that nanocrystals (<3 nm) were embedded at the interface of the bulk surface and the anodized layer.

原文???core.languages.en_GB???
頁(從 - 到)E258-E262
期刊Journal of the Electrochemical Society
163
發行號9
DOIs
出版狀態已出版 - 2016

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