TY - JOUR
T1 - Separated-transport-recombination p-i-n photodiode for high-speed and high-power performance
AU - Shi, Jin Wei
AU - Hsu, H. C.
AU - Huang, F. H.
AU - Liu, W. S.
AU - Chyi, J. I.
AU - Lu, Ja Yu
AU - Sun, C. K.
AU - Pan, Ci Ling
N1 - Funding Information:
Manuscript received December 12, 2004; revised February 25, 2005. This work was supported by National Science Council of Taiwan under Grant NSC 92-2218-E-008-011-and Grant 93-2215-E-008-022-. J.-W. Shi, H.-C. Hsu, F.-H. Huang, W.-S. Liu, and J.-I. Chyi are with the Department of Electrical Engineering, National Central University, Taoyuan 320, Taiwan, R.O.C. (e-mail: [email protected]). J.-Y. Lu and C.-K. Sun are with the Graduate Institute of Electro-Optical Engineering, National Taiwan University, Taipei 106, Taiwan, R.O.C. C.-L. Pan is with the Institute of Electro-Optical Engineering, National Chaio Tung University, Hsinchu, 300, Taiwan, R.O.C. Digital Object Identifier 10.1109/LPT.2005.850886
PY - 2005/8
Y1 - 2005/8
N2 - We demonstrate a novel p-i-n photodiode (PD) structure, the separated-transport-recombination PD, which can greatly relieve the tradeoffs among the resistance-capacitance bandwidth limitation, responsivity, and output saturation power performance. Incorporating a short carrier lifetime (less than 1 ps) epitaxial layer to serve as a recombination center, this device exhibits superior speed and power performance to a control PD that has a pure intrinsic photoabsorption layer. Our demonstrated structure can also eliminate the bandwidth degradation problem of the high-speed photodetector, whose active photoabsorption layer is fully composed of short lifetime (∼1 ps) materials, under high dc bias voltages.
AB - We demonstrate a novel p-i-n photodiode (PD) structure, the separated-transport-recombination PD, which can greatly relieve the tradeoffs among the resistance-capacitance bandwidth limitation, responsivity, and output saturation power performance. Incorporating a short carrier lifetime (less than 1 ps) epitaxial layer to serve as a recombination center, this device exhibits superior speed and power performance to a control PD that has a pure intrinsic photoabsorption layer. Our demonstrated structure can also eliminate the bandwidth degradation problem of the high-speed photodetector, whose active photoabsorption layer is fully composed of short lifetime (∼1 ps) materials, under high dc bias voltages.
KW - High-power photodiode
KW - Optical receivers
KW - Photodiode (PD)
UR - http://www.scopus.com/inward/record.url?scp=23844448669&partnerID=8YFLogxK
U2 - 10.1109/LPT.2005.850886
DO - 10.1109/LPT.2005.850886
M3 - 期刊論文
AN - SCOPUS:23844448669
SN - 1041-1135
VL - 17
SP - 1722
EP - 1724
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 8
ER -