Semiconductor layer transfer by anodic wafer bonding

T. H. Lee, Q. Y. Ton, Y. L. Chao, L. J. Huang, U. Goesele

研究成果: 會議貢獻類型會議論文同行評審


Semiconductor on glass (SOG) are prepared using anodic bonding and the layer splitting approach. Anodic bonding requires less stringent surface smoothness. The glass contains some mobile ions at least in the near surface region to create a strong local electrostatic attraction force at the bonding interface when an external bias is applied. The temperature required for realizing anodic bonding depends on the type of the glass used ranging from 150-200 °C for a slide glass to 300-500 °C for a PYREX glass to 550-600 °C for a high temperature glass. The temperature for the layer splitting should be close to the bonding temperature to avoid excess thermal stresses in the bonding pair.

出版狀態已出版 - 1997
事件Proceedings of the 1997 IEEE International SOI Conference - Fish Camp, CA, USA
持續時間: 6 10月 19979 10月 1997


???event.eventtypes.event.conference???Proceedings of the 1997 IEEE International SOI Conference
城市Fish Camp, CA, USA


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