Semiconductor layer transfer by anodic wafer bonding

T. H. Lee; Q. Y. Ton; Y. L. Chao; L. J. Huang; U. Goesele

Semiconductor layer transfer by anodic wafer bonding

T. H. Lee, Q. Y. Ton, Y. L. Chao, L. J. Huang, U. Goesele

機械工程學系

研究成果: 會議貢獻類型 › 會議論文 › 同行評審

摘要

Semiconductor on glass (SOG) are prepared using anodic bonding and the layer splitting approach. Anodic bonding requires less stringent surface smoothness. The glass contains some mobile ions at least in the near surface region to create a strong local electrostatic attraction force at the bonding interface when an external bias is applied. The temperature required for realizing anodic bonding depends on the type of the glass used ranging from 150-200 °C for a slide glass to 300-500 °C for a PYREX glass to 550-600 °C for a high temperature glass. The temperature for the layer splitting should be close to the bonding temperature to avoid excess thermal stresses in the bonding pair.

原文	???core.languages.en_GB???
頁面	40-41
頁數	2
出版狀態	已出版 - 1997
事件	Proceedings of the 1997 IEEE International SOI Conference - Fish Camp, CA, USA 持續時間: 6 10月 1997 → 9 10月 1997

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???event.eventtypes.event.conference???	Proceedings of the 1997 IEEE International SOI Conference
城市	Fish Camp, CA, USA
期間	6/10/97 → 9/10/97

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abstract = "Semiconductor on glass (SOG) are prepared using anodic bonding and the layer splitting approach. Anodic bonding requires less stringent surface smoothness. The glass contains some mobile ions at least in the near surface region to create a strong local electrostatic attraction force at the bonding interface when an external bias is applied. The temperature required for realizing anodic bonding depends on the type of the glass used ranging from 150-200 °C for a slide glass to 300-500 °C for a PYREX glass to 550-600 °C for a high temperature glass. The temperature for the layer splitting should be close to the bonding temperature to avoid excess thermal stresses in the bonding pair.",

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TY - CONF

T1 - Semiconductor layer transfer by anodic wafer bonding

AU - Lee, T. H.

AU - Ton, Q. Y.

AU - Chao, Y. L.

AU - Huang, L. J.

AU - Goesele, U.

PY - 1997

Y1 - 1997

N2 - Semiconductor on glass (SOG) are prepared using anodic bonding and the layer splitting approach. Anodic bonding requires less stringent surface smoothness. The glass contains some mobile ions at least in the near surface region to create a strong local electrostatic attraction force at the bonding interface when an external bias is applied. The temperature required for realizing anodic bonding depends on the type of the glass used ranging from 150-200 °C for a slide glass to 300-500 °C for a PYREX glass to 550-600 °C for a high temperature glass. The temperature for the layer splitting should be close to the bonding temperature to avoid excess thermal stresses in the bonding pair.

AB - Semiconductor on glass (SOG) are prepared using anodic bonding and the layer splitting approach. Anodic bonding requires less stringent surface smoothness. The glass contains some mobile ions at least in the near surface region to create a strong local electrostatic attraction force at the bonding interface when an external bias is applied. The temperature required for realizing anodic bonding depends on the type of the glass used ranging from 150-200 °C for a slide glass to 300-500 °C for a PYREX glass to 550-600 °C for a high temperature glass. The temperature for the layer splitting should be close to the bonding temperature to avoid excess thermal stresses in the bonding pair.

UR - http://www.scopus.com/inward/record.url?scp=0031332448&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:0031332448

SP - 40

EP - 41

T2 - Proceedings of the 1997 IEEE International SOI Conference

Y2 - 6 October 1997 through 9 October 1997

ER -

Semiconductor layer transfer by anodic wafer bonding

摘要

???event.eventtypes.event.conference???

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