@article{8969bb9683e64a749d162c660bee49c9,
title = "Self-forming silicide/SiGe-based tube structure on Si(001) substrates",
abstract = "Silicide/SiGe-based tube structures have been fabricated onto silicon by precise transformation from two-dimensional structures to three-dimensional objects. By using the strain in a pair of lattice-mismatched epitaxy layers, a method was developed to create the tube structure by their release from a substrate. The tube structures combining semiconductor (SiGe) and metallic suicide (NiSi2) may find applications in advanced devices.",
keywords = "Self-forming, SiGe, Silicide, Tube",
author = "Chen, {H. C.} and Liao, {K. F.} and Lee, {S. W.} and Chen, {L. J.}",
note = "Funding Information: The research is supported by the Republic of China National Science Council grant No. NSC 91-2215-E-007-015 and Ministry of Education grant No. 91-E-FA04-1-4 as well as ERSO, ITRI.",
year = "2004",
month = dec,
day = "22",
doi = "10.1016/j.tsf.2004.06.167",
language = "???core.languages.en_GB???",
volume = "469-470",
pages = "483--486",
journal = "Thin Solid Films",
issn = "0040-6090",
number = "SPEC. ISS.",
}