Self-assembled Si-Ge nanorings with size and composition-control

J. H. He, C. L. Hsin, C. W. Wang, L. J. Chen

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

Self-assembled single-crystal nanorings (NRs), as small as 10 nm. on Si and Si-Ge alloys have been fabricated by the mediation of Au nanodots. Si-Ge thin films were transformed into Si-Ge nanorings (silicon nanorings doped with controlled amount of Ge) with the assistance of Au catalysts deposited directly onto the thin film with a simple process. The mechanism of nanoring formation involves the mediation by Au nanodots and evaporation of Au-Si (Au-Si-Ge) eutectic liquid droplets at high temperatures. The process promises to be an effective nanofabrication technique to produce high density and uniform in size Si and Si-Ge nanorings.

原文???core.languages.en_GB???
主出版物標題Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06
發行者IEEE Computer Society
頁面236-239
頁數4
ISBN(列印)1424400473, 9781424400478
DOIs
出版狀態已出版 - 2006
事件Extended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06 - Shanghai, China
持續時間: 15 5月 200616 5月 2006

出版系列

名字Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06

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???event.eventtypes.event.conference???Extended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06
國家/地區China
城市Shanghai
期間15/05/0616/05/06

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