摘要
The self-assembled NiSi quantum dot arrays were grown on relaxed epitaxial Si0.7Ge0.3 on (001)Si. The two dimensional pseudohexagonal structure was achieved under the influence of repulsive stress between nanodots. The undulated templates helped in achieving the growth of ordered silicide quantum dots with selected periodicity and size.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 1836-1838 |
頁數 | 3 |
期刊 | Applied Physics Letters |
卷 | 83 |
發行號 | 9 |
DOIs | |
出版狀態 | 已出版 - 1 9月 2003 |