Self-assembled NiSi quantum-dot arrays on epitaxial Si0.7Ge 0.3 on (001)Si

W. W. Wu, J. H. He, S. L. Cheng, S. W. Lee, L. J. Chen

研究成果: 雜誌貢獻期刊論文同行評審

14 引文 斯高帕斯(Scopus)

摘要

The self-assembled NiSi quantum dot arrays were grown on relaxed epitaxial Si0.7Ge0.3 on (001)Si. The two dimensional pseudohexagonal structure was achieved under the influence of repulsive stress between nanodots. The undulated templates helped in achieving the growth of ordered silicide quantum dots with selected periodicity and size.

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頁(從 - 到)1836-1838
頁數3
期刊Applied Physics Letters
83
發行號9
DOIs
出版狀態已出版 - 1 9月 2003

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