Self-assembled In0.5Ga0.5As quantum-dot lasers with doped active region

Nien Tze Yeh; Jia Ming Lee; Tzer En Nee; Jen Inn Chyi

doi:10.1109/68.874209

Self-assembled In_0.5Ga_0.5As quantum-dot lasers with doped active region

Nien Tze Yeh, Jia Ming Lee, Tzer En Nee, Jen Inn Chyi

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

8 引文斯高帕斯（Scopus）

摘要

Self-assembled In_0.5Ga_0.5As quantum-dot lasers with different doping schemes in the active region are investigated. Their lasing wavelength, characteristic temperature, quantum efficiency, and internal loss are characterized and correlated with the size, uniformity, and density of the quantum dots as revealed by atomic force microscopy. Continuous-wave operation of Be-doped quantum-dot lasers has been achieved. Undoped In_0.5Ga_0.5As quantum-dot lasers with a characteristic temperature as high as 125 K above room temperature have also been demonstrated.

原文	???core.languages.en_GB???
頁（從 - 到）	1123-1125
頁數	3
期刊	IEEE Photonics Technology Letters
卷	12
發行號	9
DOIs	https://doi.org/10.1109/68.874209
出版狀態	已出版 - 9月 2000

存取文件

10.1109/68.874209

引用此

@article{deba731a258047e9a7a37c7cb3d422bc,

title = "Self-assembled In0.5Ga0.5As quantum-dot lasers with doped active region",

abstract = "Self-assembled In0.5Ga0.5As quantum-dot lasers with different doping schemes in the active region are investigated. Their lasing wavelength, characteristic temperature, quantum efficiency, and internal loss are characterized and correlated with the size, uniformity, and density of the quantum dots as revealed by atomic force microscopy. Continuous-wave operation of Be-doped quantum-dot lasers has been achieved. Undoped In0.5Ga0.5As quantum-dot lasers with a characteristic temperature as high as 125 K above room temperature have also been demonstrated.",

author = "Yeh, {Nien Tze} and Lee, {Jia Ming} and Nee, {Tzer En} and Chyi, {Jen Inn}",

note = "Funding Information: Manuscript received December 6, 1999; revised May 2, 2000. This work was supported by the National Science Council of R.O.C. under Contract NSC 87-2215-E008-012 and by the MBE Laboratory of the Center for Optical Science at National Central University.",

year = "2000",

month = sep,

doi = "10.1109/68.874209",

language = "???core.languages.en_GB???",

volume = "12",

pages = "1123--1125",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

number = "9",

}

TY - JOUR

T1 - Self-assembled In0.5Ga0.5As quantum-dot lasers with doped active region

AU - Yeh, Nien Tze

AU - Lee, Jia Ming

AU - Nee, Tzer En

AU - Chyi, Jen Inn

N1 - Funding Information: Manuscript received December 6, 1999; revised May 2, 2000. This work was supported by the National Science Council of R.O.C. under Contract NSC 87-2215-E008-012 and by the MBE Laboratory of the Center for Optical Science at National Central University.

PY - 2000/9

Y1 - 2000/9

N2 - Self-assembled In0.5Ga0.5As quantum-dot lasers with different doping schemes in the active region are investigated. Their lasing wavelength, characteristic temperature, quantum efficiency, and internal loss are characterized and correlated with the size, uniformity, and density of the quantum dots as revealed by atomic force microscopy. Continuous-wave operation of Be-doped quantum-dot lasers has been achieved. Undoped In0.5Ga0.5As quantum-dot lasers with a characteristic temperature as high as 125 K above room temperature have also been demonstrated.

AB - Self-assembled In0.5Ga0.5As quantum-dot lasers with different doping schemes in the active region are investigated. Their lasing wavelength, characteristic temperature, quantum efficiency, and internal loss are characterized and correlated with the size, uniformity, and density of the quantum dots as revealed by atomic force microscopy. Continuous-wave operation of Be-doped quantum-dot lasers has been achieved. Undoped In0.5Ga0.5As quantum-dot lasers with a characteristic temperature as high as 125 K above room temperature have also been demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=0034266502&partnerID=8YFLogxK

U2 - 10.1109/68.874209

DO - 10.1109/68.874209

M3 - 期刊論文

AN - SCOPUS:0034266502

SN - 1041-1135

VL - 12

SP - 1123

EP - 1125

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 9

ER -

Self-assembled In0.5Ga0.5As quantum-dot lasers with doped active region

摘要

存取文件

指紋

引用此

Self-assembled In_0.5Ga_0.5As quantum-dot lasers with doped active region