摘要
Y2O3, as a common high κ gate dielectric, has been directly deposited on (In)GaAs, GaSb, and Ge using electron beam evaporation in ultra-high vacuum. These semiconductors have distinctly different chemical bonding and surface electronic characteristics. No interfacial passivation layer was employed. High-quality Y2O3/semiconductor interfaces have been achieved, resulting in low interfacial trap densities and high-temperature thermal stability, essential for the CMOS compatible process. Self-aligned inversion channel n-InGaAs, p-GaSb, and p-Ge MOSFETs have been fabricated with excellent device performances.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 330-334 |
頁數 | 5 |
期刊 | Microelectronic Engineering |
卷 | 147 |
DOIs | |
出版狀態 | 已出版 - 16 5月 2015 |