@inproceedings{856ef63d5eb240d2a1c30826d604db47,
title = "Selective growth of InAs quantum dots on patterned GaAs substrate by metal-organic chemical vapor deposition",
abstract = "In this paper, we demonstrate quantum dots (QDs) on nano-scale mesa using wet chemical etching and epitaxial growth process on Si-doped GaAs substrates.",
keywords = "Buffer layers, Chemical vapor deposition, Epitaxial growth, Gallium arsenide, Laboratories, Optical buffering, Photoluminescence, Quantum dots, Substrates, US Department of Transportation",
author = "Hsieh, {Tung Po} and Chiu, {Pe Chin} and Liu, {Yu Chuan} and Yeh, {Nien Tze} and Ho, {Wen Jeng} and Chyi, {Jen Inn}",
note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 International Symposium on Compound Semiconductors, ISCS 2003 ; Conference date: 25-08-2003 Through 27-08-2003",
year = "2003",
doi = "10.1109/ISCS.2003.1239923",
language = "???core.languages.en_GB???",
series = "IEEE International Symposium on Compound Semiconductors, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "97--98",
booktitle = "2003 International Symposium on Compound Semiconductors, ISCS 2003",
}