Selective growth of InAs quantum dots on patterned GaAs

Tung Po Hsieh, Pei Chin Chiu, Yu Chuan Liu, Nien Tze Yeh, Wen Jeng Ho, Jen Inn Chyi

研究成果: 雜誌貢獻期刊論文同行評審

7 引文 斯高帕斯(Scopus)

摘要

We report selective growth of InAs self-assembled quantum dots (QDs) on nano-ridges (30-50 nm) formed by wet chemical etching and epitaxial growth processes. The QDs formed on the ridges exhibit distinctive characteristics from those on the planar region between the ridges in terms of physical shape as well as optical property. The QDs, which align one by one on the top of the ridges, are of an asymmetric shape along the [011] and [0 1_ 1] directions. By defining the width of ridge and the monolayers of QDs, we are able to control the height and the width of these QDs. Compared to the QDs on the planar region between the ridges, the luminescence from QDs on the ridges exhibits a shorter wavelength, which is attributed to higher compressive strain in these QDs.

原文???core.languages.en_GB???
頁(從 - 到)262-266
頁數5
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
23
發行號1
DOIs
出版狀態已出版 - 2005

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