摘要
We propose and demonstrate a novel device structure of resonant cavity-enhanced photodetector (RCE-PD). The new RCE-PD structure consists of a bottom distributed Bragg reflector (DBR), a cavity with InGaAs multiple quantum wells (MQWs) for light absorption and a top mirror of sub-wavelength grating. By changing the fill factor of the 2-D grating, the effective cavity length of RCE-PDs can be varied so the resonant wavelength can be selected post growth. Accordingly, we can fabricate an array of PDs on a single chip, on which every PD aims for a specific wavelength.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 3572-3579 |
頁數 | 8 |
期刊 | Optics Express |
卷 | 20 |
發行號 | 4 |
DOIs | |
出版狀態 | 已出版 - 13 2月 2012 |