Schottky rectifiers fabricated on free-standing GaN substrates

J. W. Johnson, J. R. LaRoch, F. Ren, B. P. Gila, M. E. Overberg, C. R. Abernathy, J. I. Chyi, C. C. Chuo, T. E. Nee, C. M. Lee, K. P. Lee, S. S. Park, Y. J. Park, S. J. Pearton

研究成果: 雜誌貢獻期刊論文同行評審

39 引文 斯高帕斯(Scopus)

摘要

GaN Schottky rectifiers have been fabricated on free-standing substrates and on epi/substrate structures. Forward turn-on voltages were as low as 3 V at 25°C. Reverse recovery was complete in <600 ns, with a characteristic time constant of ∼163 ns. The temperature coefficient for reverse breakdown voltage (VB) was -2.5 ± 0.6 V K-1 which is much lower than for lateral rectifiers reported previously, where values up to -30 V K-1 were achieved. Reverse currents increased with rectifying contact diameter and VB decreased with increasing contact size. The best on-state resistance was 20.5 mΩcm-2 for diodes with VB = 450 V, producing a figure-of-merit (VB)2/RON of ∼10 MW cm-2.

原文???core.languages.en_GB???
頁(從 - 到)405-410
頁數6
期刊Solid-State Electronics
45
發行號3
DOIs
出版狀態已出版 - 3月 2001

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