Schottky barrier heights of InxAl1-xAs (0≤x≤0.35) epilayers on GaAs

J. I. Chyi; J. L. Shieh; R. J. Lin; J. W. Pan; R. M. Lin

doi:10.1063/1.359545

Schottky barrier heights of In_xAl_1-xAs (0≤x≤0.35) epilayers on GaAs

J. I. Chyi, J. L. Shieh, R. J. Lin, J. W. Pan, R. M. Lin

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

5 引文斯高帕斯（Scopus）

摘要

The electrical characteristics of Al Schottky diodes on n-type In _xAl_1-xAs (0≤x≤0.35) were investigated in detail by current-voltage and capacitance-voltage measurements. These high-quality InAlAs epilayers were grown on GaAs using step-graded buffers under proper growth conditions. It was found that the Schottky barrier height of the epilayers increases with Al content as opposed to what was predicted previously. The effect of the interfacial oxide layer on the determination of Schottky barrier height is also presented.

原文	???core.languages.en_GB???
頁（從 - 到）	1813-1815
頁數	3
期刊	Journal of Applied Physics
卷	77
發行號	4
DOIs	https://doi.org/10.1063/1.359545
出版狀態	已出版 - 1995

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10.1063/1.359545

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T1 - Schottky barrier heights of InxAl1-xAs (0≤x≤0.35) epilayers on GaAs

AU - Chyi, J. I.

AU - Shieh, J. L.

AU - Lin, R. J.

AU - Pan, J. W.

AU - Lin, R. M.

PY - 1995

Y1 - 1995

N2 - The electrical characteristics of Al Schottky diodes on n-type In xAl1-xAs (0≤x≤0.35) were investigated in detail by current-voltage and capacitance-voltage measurements. These high-quality InAlAs epilayers were grown on GaAs using step-graded buffers under proper growth conditions. It was found that the Schottky barrier height of the epilayers increases with Al content as opposed to what was predicted previously. The effect of the interfacial oxide layer on the determination of Schottky barrier height is also presented.

AB - The electrical characteristics of Al Schottky diodes on n-type In xAl1-xAs (0≤x≤0.35) were investigated in detail by current-voltage and capacitance-voltage measurements. These high-quality InAlAs epilayers were grown on GaAs using step-graded buffers under proper growth conditions. It was found that the Schottky barrier height of the epilayers increases with Al content as opposed to what was predicted previously. The effect of the interfacial oxide layer on the determination of Schottky barrier height is also presented.

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DO - 10.1063/1.359545

M3 - 期刊論文

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VL - 77

SP - 1813

EP - 1815

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Schottky barrier heights of InxAl1-xAs (0≤x≤0.35) epilayers on GaAs

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Schottky barrier heights of In_xAl_1-xAs (0≤x≤0.35) epilayers on GaAs