Scanning electron filling modulation reflectance of charged InGaAs self-assembled quantum dot

T. M. Hsu, W. H. Chang, C. Y. Lai, N. T. Yeh, J. I. Chyi

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

We present the scanning electron-filling modulation reflectance (SEFR) of charged In 0.5Ga 0.5As self-assembled quantum dots. The SEFR is performed by applying a small constant modulation voltage and scanning the dc bias through the quantum dot energy levels. The spectral intensity of the SEFR can be related to the electron density confined in each quantum state, which shows a good agreement with the apparent carrier concentration deduced from the capacitance-voltage measurements. In this study, we find that the transition energy of quantum-dot excited state is about 10 meV smaller than the values obtained from the photoluminescence and electron-filling modulation reflectance. This phenomenon is explained by the Coulomb interactions between the optical excited electron-hole pair and the electrons occupied in the quantum dots.

原文???core.languages.en_GB???
頁(從 - 到)4399-4402
頁數4
期刊Journal of Applied Physics
91
發行號7
DOIs
出版狀態已出版 - 1 4月 2002

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