@inproceedings{f44d24de77d24007835290428e08d376,
title = "Scaling effect Of GaAs pHEMTs small signal and noise model",
abstract = "In this work, small-signal and noise model with gate-width scaling of GaAs pseudomorphic high electron mobility transistors (pHEMT) are presented. The scaling effect of the model parameters are derived from an accurate small-signal and noise equivalent circuit model for the different gate widths of pHEMTs. The experimental and model results show that noise coefficients are not dependant on the gate width while devices biasing at the same current density.",
keywords = "Model, Nnoise, pHEMT, Scaling",
author = "Huang, {S. C.} and Lin, {W. Y.} and Hsin, {Y. M.}",
year = "2009",
doi = "10.1063/1.3140458",
language = "???core.languages.en_GB???",
isbn = "9780735406650",
series = "AIP Conference Proceedings",
pages = "305--308",
booktitle = "Noise and Fluctuations - 20th International Conference on Noise and Fluctuations - ICNF 2009",
note = "20th International Conference on Noise and Fluctuations, ICNF 2009 ; Conference date: 14-06-2009 Through 19-06-2009",
}