Sb on Si(111) studied by branching-ratio photoelectron holography

D. A. Luh, M. T. Sieger, T. Miller, T. C. Chiang

研究成果: 雜誌貢獻期刊論文同行評審

12 引文 斯高帕斯(Scopus)

摘要

Branching-ratio photoelectron holography has been employed to study the structure of Sb adsorbed on Si(111). The Sb 4d core-level emission was measured as a function of emission direction, and the branching ratio between the two spin-orbit-split components was determined. The data were holographically transformed to yield an image for the atomic distributions near the Sb emitter. The results are consistent with a trimer model.

原文???core.languages.en_GB???
頁(從 - 到)345-349
頁數5
期刊Surface Science
374
發行號1-3
DOIs
出版狀態已出版 - 10 3月 1997

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