Sb-based semiconductors for low power electronics

Nien Tze Yeh, Pei Chin Chiu, Jen Inn Chyi, Fan Ren, Stephen J. Pearton

研究成果: 雜誌貢獻期刊論文同行評審

22 引文 斯高帕斯(Scopus)

摘要

Sb-based semiconductors incorporating heterostructures of InP, InAs, AlSb, InSb, GaSb, InGaAs, InGaSb, GaAsSb and InGaAsSb can be used for high speed, low power applications such as wide-bandwidth telecommunications for aircraft, satellites, wireless communication, and global positioning systems, as well as thermophotovoltaic cells, THz medical imaging and remote sensing, IR sensors for space exploration, high resolution biomedical spectroscopy and military systems, including security scanners. Sb-based electronic devices such as heterojunction bipolar transistors (HBTs) offer high speed, low power consumption and good breakdown voltages. High electron mobility InAs/AlSb or InSb/AlSb and high hole mobility InGaSb/AlSb quantum well heterostructure field effect transistors (HFETs) have also been widely pursued for THz amplifiers and high speed complementary logic circuits.

原文???core.languages.en_GB???
頁(從 - 到)4616-4627
頁數12
期刊Journal of Materials Chemistry C
1
發行號31
DOIs
出版狀態已出版 - 18 7月 2013

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