TY - JOUR
T1 - Sb-based semiconductors for low power electronics
AU - Yeh, Nien Tze
AU - Chiu, Pei Chin
AU - Chyi, Jen Inn
AU - Ren, Fan
AU - Pearton, Stephen J.
PY - 2013/7/18
Y1 - 2013/7/18
N2 - Sb-based semiconductors incorporating heterostructures of InP, InAs, AlSb, InSb, GaSb, InGaAs, InGaSb, GaAsSb and InGaAsSb can be used for high speed, low power applications such as wide-bandwidth telecommunications for aircraft, satellites, wireless communication, and global positioning systems, as well as thermophotovoltaic cells, THz medical imaging and remote sensing, IR sensors for space exploration, high resolution biomedical spectroscopy and military systems, including security scanners. Sb-based electronic devices such as heterojunction bipolar transistors (HBTs) offer high speed, low power consumption and good breakdown voltages. High electron mobility InAs/AlSb or InSb/AlSb and high hole mobility InGaSb/AlSb quantum well heterostructure field effect transistors (HFETs) have also been widely pursued for THz amplifiers and high speed complementary logic circuits.
AB - Sb-based semiconductors incorporating heterostructures of InP, InAs, AlSb, InSb, GaSb, InGaAs, InGaSb, GaAsSb and InGaAsSb can be used for high speed, low power applications such as wide-bandwidth telecommunications for aircraft, satellites, wireless communication, and global positioning systems, as well as thermophotovoltaic cells, THz medical imaging and remote sensing, IR sensors for space exploration, high resolution biomedical spectroscopy and military systems, including security scanners. Sb-based electronic devices such as heterojunction bipolar transistors (HBTs) offer high speed, low power consumption and good breakdown voltages. High electron mobility InAs/AlSb or InSb/AlSb and high hole mobility InGaSb/AlSb quantum well heterostructure field effect transistors (HFETs) have also been widely pursued for THz amplifiers and high speed complementary logic circuits.
UR - http://www.scopus.com/inward/record.url?scp=84904064227&partnerID=8YFLogxK
U2 - 10.1039/c3tc30585f
DO - 10.1039/c3tc30585f
M3 - 期刊論文
AN - SCOPUS:84904064227
SN - 2050-7534
VL - 1
SP - 4616
EP - 4627
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
IS - 31
ER -