Room temperature steady-state and transient carrier transport properties of germanium single electron/hole transistors

W. T. Lai; P. W. Li; David M.T. Kuo

doi:10.1109/istdm.2006.246510

Room temperature steady-state and transient carrier transport properties of germanium single electron/hole transistors

W. T. Lai, P. W. Li, David M.T. Kuo

電機工程學系

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

原文	???core.languages.en_GB???
主出版物標題	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
發行者	IEEE Computer Society
ISBN（列印）	1424404614, 9781424404612
DOIs	https://doi.org/10.1109/istdm.2006.246510
出版狀態	已出版 - 2006
事件	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Princeton, NJ, United States 持續時間: 15 5月 2006 → 17 5月 2006

出版系列

名字	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
卷	2006

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???	Third International SiGe Technology and Device Meeting, ISTDM 2006
國家/地區	United States
城市	Princeton, NJ
期間	15/05/06 → 17/05/06

存取文件

10.1109/istdm.2006.246510

引用此

Lai, W. T., Li, P. W., & Kuo, D. M. T. (2006). Room temperature steady-state and transient carrier transport properties of germanium single electron/hole transistors. 於 Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest 文章 1716004 (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest; 卷 2006). IEEE Computer Society. https://doi.org/10.1109/istdm.2006.246510

Lai, W. T. ; Li, P. W. ; Kuo, David M.T. / Room temperature steady-state and transient carrier transport properties of germanium single electron/hole transistors. Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. IEEE Computer Society, 2006. (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest).

@inproceedings{0729612084a64065b9b2eebda6e230b7,

title = "Room temperature steady-state and transient carrier transport properties of germanium single electron/hole transistors",

author = "Lai, {W. T.} and Li, {P. W.} and Kuo, {David M.T.}",

year = "2006",

doi = "10.1109/istdm.2006.246510",

language = "???core.languages.en_GB???",

isbn = "1424404614",

series = "Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest",

publisher = "IEEE Computer Society",

booktitle = "Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest",

note = "Third International SiGe Technology and Device Meeting, ISTDM 2006 ; Conference date: 15-05-2006 Through 17-05-2006",

}

Lai, WT, Li, PW & Kuo, DMT 2006, Room temperature steady-state and transient carrier transport properties of germanium single electron/hole transistors. 於 Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest., 1716004, Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest, 卷 2006, IEEE Computer Society, Third International SiGe Technology and Device Meeting, ISTDM 2006, Princeton, NJ, United States, 15/05/06. https://doi.org/10.1109/istdm.2006.246510

Room temperature steady-state and transient carrier transport properties of germanium single electron/hole transistors. / Lai, W. T.; Li, P. W.; Kuo, David M.T.
Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. IEEE Computer Society, 2006. 1716004 (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest; 卷 2006).

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

TY - GEN

T1 - Room temperature steady-state and transient carrier transport properties of germanium single electron/hole transistors

AU - Lai, W. T.

AU - Li, P. W.

AU - Kuo, David M.T.

PY - 2006

Y1 - 2006

UR - http://www.scopus.com/inward/record.url?scp=34247484946&partnerID=8YFLogxK

U2 - 10.1109/istdm.2006.246510

DO - 10.1109/istdm.2006.246510

M3 - 會議論文篇章

AN - SCOPUS:34247484946

SN - 1424404614

SN - 9781424404612

T3 - Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest

BT - Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest

PB - IEEE Computer Society

T2 - Third International SiGe Technology and Device Meeting, ISTDM 2006

Y2 - 15 May 2006 through 17 May 2006

ER -

Lai WT, Li PW, Kuo DMT. Room temperature steady-state and transient carrier transport properties of germanium single electron/hole transistors. 於 Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. IEEE Computer Society. 2006. 1716004. (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest). doi: 10.1109/istdm.2006.246510