@inproceedings{bb5d5b50e9ae47179210973d79bf8b34,
title = "Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode",
abstract = "A GaSb/GaAs quantum-dot light-emitting diode (QD LED) with a single GaSb QD layer is investigated in this paper. The room-temperature photoluminescence peak blue shift with increasing excitation power densities suggests a type-II alignment of the GaSb/GaAs hetero-structures. Significant electroluminescence is observed for the device under forward biases, which suggests that pronounced dipole transitions occur at the GaSb/GaAs interfaces. With increasing forward biases, the observed EL peak blue shift confirms that the origin of luminescence is from the type-II GaSb/GaAs QD structures.",
author = "Tseng, {Chi Che} and Lin, {Shih Yen} and Lin, {Wei Hsun} and Mai, {Shu Cheng} and Wu, {Shung Yi} and Chen, {Shu Han} and Chyi, {Jen Inn}",
year = "2010",
doi = "10.1109/ICIPRM.2010.5516361",
language = "???core.languages.en_GB???",
isbn = "9781424459209",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
pages = "374--376",
booktitle = "2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings",
note = "22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 ; Conference date: 31-05-2010 Through 04-06-2010",
}