Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots

W. H. Chang; A. T. Chou; W. Y. Chen; H. S. Chang; T. M. Hsu; Z. Pei; P. S. Chen; S. W. Lee; L. S. Lai; S. C. Lu; M. J. Tsai

doi:10.1063/1.1616665

Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots

W. H. Chang, A. T. Chou, W. Y. Chen, H. S. Chang, T. M. Hsu, Z. Pei, P. S. Chen, S. W. Lee, L. S. Lai, S. C. Lu, M. J. Tsai

材料科學與工程研究所

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

67 引文斯高帕斯（Scopus）

摘要

A discussion on the room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si quantum-dot light-emitting diodes was presented. It was reported that different passivation processes were employed. The results showed that the integrated electroluminescence intensities were relatively less sensitive to temperature, persisting at nearly the same intensity up to room-temperature.

原文	???core.languages.en_GB???
頁（從 - 到）	2958-2960
頁數	3
期刊	Applied Physics Letters
卷	83
發行號	14
DOIs	https://doi.org/10.1063/1.1616665
出版狀態	已出版 - 6 10月 2003

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10.1063/1.1616665

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abstract = "A discussion on the room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si quantum-dot light-emitting diodes was presented. It was reported that different passivation processes were employed. The results showed that the integrated electroluminescence intensities were relatively less sensitive to temperature, persisting at nearly the same intensity up to room-temperature.",

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AU - Chang, W. H.

AU - Chou, A. T.

AU - Chen, W. Y.

AU - Chang, H. S.

AU - Hsu, T. M.

AU - Pei, Z.

AU - Chen, P. S.

AU - Lee, S. W.

AU - Lai, L. S.

AU - Lu, S. C.

AU - Tsai, M. J.

PY - 2003/10/6

Y1 - 2003/10/6

N2 - A discussion on the room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si quantum-dot light-emitting diodes was presented. It was reported that different passivation processes were employed. The results showed that the integrated electroluminescence intensities were relatively less sensitive to temperature, persisting at nearly the same intensity up to room-temperature.

AB - A discussion on the room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si quantum-dot light-emitting diodes was presented. It was reported that different passivation processes were employed. The results showed that the integrated electroluminescence intensities were relatively less sensitive to temperature, persisting at nearly the same intensity up to room-temperature.

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VL - 83

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EP - 2960

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots

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