Room temperature 1.3 and 1.5 μm electroluminescence from Si/Ge quantum dots (QDs)/Si multi-layers

Z. Pei, P. S. Chen, S. W. Lee, L. S. Lai, S. C. Lu, M. J. Tsai, W. H. Chang, W. Y. Chen, A. T. Chou, T. M. Hsu

研究成果: 雜誌貢獻期刊論文同行評審

5 引文 斯高帕斯(Scopus)

摘要

Electroluminescence devices that use Si/Ge multilayer quantum dots as emission material emitting at 1.3 and 1.5μm are reported in this paper. The Si/Ge quantum dots were made by commercial ultra-high vacuum chemical vapor deposition techniques at 600°C. The photoluminescence spectrum shows a 1.55μm emission peak at room temperature. Low and high temperature (710°C) oxides are used as passivation layers for the mesa surface. The high temperature oxidized samples exhibit low device leakage currents and a 2×10 -7 external quantum efficiency at room temperature. However, the high temperature process causes Si and Ge to inter-diffuse and makes the emission shift to 1.3μm. The low temperature oxidation results in large device leakage current and lower emission intensity but leaves the emission peak at 1.5μm.

原文???core.languages.en_GB???
頁(從 - 到)165-169
頁數5
期刊Applied Surface Science
224
發行號1-4
DOIs
出版狀態已出版 - 15 3月 2004

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