We have investigated how the density of threading dislocations in GaN affects the decay of the intensity of nano-acoustic waves. We carried out measurements using a reection-type femtosecond pump probe, and thus, we determined the local dislocation density from the lifetime of nano-acoustic waves. We found that for a dislocation density of 108 cm-2, defect scattering will surmount other scattering mechanisms and dominate the attenuation of 100GHz acoustic phonons.
|頁（從 - 到）||171-175|
|期刊||Chinese Journal of Physics|
|出版狀態||已出版 - 2月 2011|