摘要
We have investigated how the density of threading dislocations in GaN affects the decay of the intensity of nano-acoustic waves. We carried out measurements using a reection-type femtosecond pump probe, and thus, we determined the local dislocation density from the lifetime of nano-acoustic waves. We found that for a dislocation density of 108 cm-2, defect scattering will surmount other scattering mechanisms and dominate the attenuation of 100GHz acoustic phonons.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 171-175 |
頁數 | 5 |
期刊 | Chinese Journal of Physics |
卷 | 49 |
發行號 | 1 |
出版狀態 | 已出版 - 2月 2011 |