RF power characteristics of SiGe HBTs at cryogenic temperatures

Keyphrases

• Heterojunction Bipolar Transistors 100%
• Power Characteristics 100%
• RF Power 100%
• Cryogenic Temperature 100%
• Conduction Band 60%
• Current Gain 40%
• Temperature Effect 40%
• Current Cutoff 40%
• Cut-off Frequency 40%
• Transistor 20%
• Kirk Effect 20%
• High Current 20%
• Power Output Characteristics 20%
• AC-DC 20%
• Saturation Region 20%
• Collector Current 20%
• Valance Band 20%
• DC Characteristics 20%
• Heterojunction 20%
• Power Performance 20%
• Band Discontinuity 20%
• Operation Temperature 20%
• Power Added Efficiency 20%
• Polystyrene Nanoplastics (PS-NPs) 20%
• Power Output 20%

Engineering

• Heterojunctions 100%
• Bipolar Transistor 100%
• Cryogenic Temperature 100%
• Conduction Band 50%
• Temperature Dependence 33%
• Output Power 33%
• Current Gain 33%
• Cutoff Frequency 33%
• Gain Frequency 33%
• Saturation Region 16%
• Current Collector 16%
• Operation Temperature 16%
• Measured Output 16%
• Power Added Efficiency 16%