摘要
A study was conducted on AIN/GaN double-barrier resonant tunneling diodes. The diodes were grown by plasma-assisted molecular-beam epitaxy. The current-voltage characteristics were found to be sensitive to the way of voltage sweep. The strong variations in current-voltage characteristics were caused by a large piezoelectric field and electron trapping.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 3628 |
頁數 | 1 |
期刊 | Applied Physics Letters |
卷 | 83 |
發行號 | 17 |
DOIs | |
出版狀態 | 已出版 - 27 10月 2003 |