Response to "Comment on 'AIN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy'" [Appl. Phys. Lett. 83, 3626 (2003)]

Akihiko Kikuchi, Ryo Bannai, Katsumi Kishino, Chia Ming Lee, Jen Inn Chyi

研究成果: 雜誌貢獻回顧評介論文同行評審

19 引文 斯高帕斯(Scopus)

摘要

A study was conducted on AIN/GaN double-barrier resonant tunneling diodes. The diodes were grown by plasma-assisted molecular-beam epitaxy. The current-voltage characteristics were found to be sensitive to the way of voltage sweep. The strong variations in current-voltage characteristics were caused by a large piezoelectric field and electron trapping.

原文???core.languages.en_GB???
頁(從 - 到)3628
頁數1
期刊Applied Physics Letters
83
發行號17
DOIs
出版狀態已出版 - 27 10月 2003

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