Resonant cavity enhanced AlGaAs/GaAs heterojunction phototransistors with an intermediate InGaAs layer in the collector

M. S. Ünlü; K. Kishino; J. I. Chyi; L. Arsenault; J. Reed; S. Noor Mohammad; H. Morkoç

doi:10.1063/1.103410

Resonant cavity enhanced AlGaAs/GaAs heterojunction phototransistors with an intermediate InGaAs layer in the collector

M. S. Ünlü, K. Kishino, J. I. Chyi, L. Arsenault, J. Reed, S. Noor Mohammad, H. Morkoç

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

65 引文斯高帕斯（Scopus）

摘要

Gain and spectral response of heterojunction phototransistors (HPTs) having a thin (0.1 μm) InGaAs strained absorbing layer in the collector has been investigated. Low dark current ∼ 5 pA (1×10^-8 A/cm ²) and large optical gain as high as 500 were observed. A resonant cavity composed of an AlAs/GaAs buried mirror structure (reflectivity R=0.9) and the epilayer surface (R=0.3) was used to enhance the otherwise small quantum efficiency η (at InGaAs absorption wavelength). For a 1000 Å absorbing layer an improvement of η from 6.7 to 43% (6.4-fold) was demonstrated, in agreement with calculations, through the spectral analysis of the HPTs with and without resonant cavities.

原文	???core.languages.en_GB???
頁（從 - 到）	750-752
頁數	3
期刊	Applied Physics Letters
卷	57
發行號	8
DOIs	https://doi.org/10.1063/1.103410
出版狀態	已出版 - 1990

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10.1063/1.103410

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@article{07567a0b525f487aba23051d60eb4774,

title = "Resonant cavity enhanced AlGaAs/GaAs heterojunction phototransistors with an intermediate InGaAs layer in the collector",

abstract = "Gain and spectral response of heterojunction phototransistors (HPTs) having a thin (0.1 μm) InGaAs strained absorbing layer in the collector has been investigated. Low dark current ∼ 5 pA (1×10-8 A/cm 2) and large optical gain as high as 500 were observed. A resonant cavity composed of an AlAs/GaAs buried mirror structure (reflectivity R=0.9) and the epilayer surface (R=0.3) was used to enhance the otherwise small quantum efficiency η (at InGaAs absorption wavelength). For a 1000 {\AA} absorbing layer an improvement of η from 6.7 to 43% (6.4-fold) was demonstrated, in agreement with calculations, through the spectral analysis of the HPTs with and without resonant cavities.",

author = "{\"U}nl{\"u}, {M. S.} and K. Kishino and Chyi, {J. I.} and L. Arsenault and J. Reed and Mohammad, {S. Noor} and H. Morko{\c c}",

year = "1990",

doi = "10.1063/1.103410",

language = "???core.languages.en_GB???",

volume = "57",

pages = "750--752",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "8",

}

TY - JOUR

T1 - Resonant cavity enhanced AlGaAs/GaAs heterojunction phototransistors with an intermediate InGaAs layer in the collector

AU - Ünlü, M. S.

AU - Kishino, K.

AU - Chyi, J. I.

AU - Arsenault, L.

AU - Reed, J.

AU - Mohammad, S. Noor

AU - Morkoç, H.

PY - 1990

Y1 - 1990

N2 - Gain and spectral response of heterojunction phototransistors (HPTs) having a thin (0.1 μm) InGaAs strained absorbing layer in the collector has been investigated. Low dark current ∼ 5 pA (1×10-8 A/cm 2) and large optical gain as high as 500 were observed. A resonant cavity composed of an AlAs/GaAs buried mirror structure (reflectivity R=0.9) and the epilayer surface (R=0.3) was used to enhance the otherwise small quantum efficiency η (at InGaAs absorption wavelength). For a 1000 Å absorbing layer an improvement of η from 6.7 to 43% (6.4-fold) was demonstrated, in agreement with calculations, through the spectral analysis of the HPTs with and without resonant cavities.

AB - Gain and spectral response of heterojunction phototransistors (HPTs) having a thin (0.1 μm) InGaAs strained absorbing layer in the collector has been investigated. Low dark current ∼ 5 pA (1×10-8 A/cm 2) and large optical gain as high as 500 were observed. A resonant cavity composed of an AlAs/GaAs buried mirror structure (reflectivity R=0.9) and the epilayer surface (R=0.3) was used to enhance the otherwise small quantum efficiency η (at InGaAs absorption wavelength). For a 1000 Å absorbing layer an improvement of η from 6.7 to 43% (6.4-fold) was demonstrated, in agreement with calculations, through the spectral analysis of the HPTs with and without resonant cavities.

UR - http://www.scopus.com/inward/record.url?scp=0005294051&partnerID=8YFLogxK

U2 - 10.1063/1.103410

DO - 10.1063/1.103410

M3 - 期刊論文

AN - SCOPUS:0005294051

VL - 57

SP - 750

EP - 752

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 8

ER -

Resonant cavity enhanced AlGaAs/GaAs heterojunction phototransistors with an intermediate InGaAs layer in the collector

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