TY - JOUR
T1 - Residual stress classification of pulsed DC reactive sputtered aluminum nitride film via large-scale data analysis of optical emission spectroscopy
AU - Lo, Hsiao Han
AU - Chen, Wei Lun
AU - Wang, Peter J.
AU - Lai, Walter
AU - Fuh, Yiin Kuen
AU - Li, Tomi T.
N1 - Publisher Copyright:
© 2022, The Author(s), under exclusive licence to Springer-Verlag London Ltd., part of Springer Nature.
PY - 2022/4
Y1 - 2022/4
N2 - The amount of residual stress generated during the growth process of aluminum nitride (AlN) thin films prepared by pulsed DC reactive magnetron sputtering was investigated. The evaluated process parameters were pulsed DC frequency, DC power and flow gas ratio. AlN film may crack or peel from the substrate due to significant film residual stress. Therefore, the control of residual stress in films is very important for the synthesis of mechanically stable AlN films. A correlation between the residual stress and the crystal orientation of the films was studied. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), transmission electron microscope (TEM) and scanning electron microscopy (SEM) were used to measure the residual stress, crystal structure and thickness in AlN films. The results show that AlN film has a different structure and stress characteristic under different deposition conditions. The film residual stress correlates well with the film thickness. Besides, in situ optical emission spectroscopy (OES) big data were analyzed using principal component analysis (PCA) in this study. The PC1-DEV (standard deviation in the first principal component direction) was used to calculate the value residual stress (VRS) to accurately predict and classify the stress state of the deposited film, i.e., compression stress or tensile stress. The Box–Behnken experimental design was applied, a mathematical design of experiment (DOE) model was established based on the response surface method (RSM), and the optimum conditions for generating the minimum residual stress were determined.
AB - The amount of residual stress generated during the growth process of aluminum nitride (AlN) thin films prepared by pulsed DC reactive magnetron sputtering was investigated. The evaluated process parameters were pulsed DC frequency, DC power and flow gas ratio. AlN film may crack or peel from the substrate due to significant film residual stress. Therefore, the control of residual stress in films is very important for the synthesis of mechanically stable AlN films. A correlation between the residual stress and the crystal orientation of the films was studied. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), transmission electron microscope (TEM) and scanning electron microscopy (SEM) were used to measure the residual stress, crystal structure and thickness in AlN films. The results show that AlN film has a different structure and stress characteristic under different deposition conditions. The film residual stress correlates well with the film thickness. Besides, in situ optical emission spectroscopy (OES) big data were analyzed using principal component analysis (PCA) in this study. The PC1-DEV (standard deviation in the first principal component direction) was used to calculate the value residual stress (VRS) to accurately predict and classify the stress state of the deposited film, i.e., compression stress or tensile stress. The Box–Behnken experimental design was applied, a mathematical design of experiment (DOE) model was established based on the response surface method (RSM), and the optimum conditions for generating the minimum residual stress were determined.
KW - Aluminum nitride (AlN)
KW - Design of experiment (DOE)
KW - In situ optical emission spectroscopy (OES)
KW - Principal correspond analysis (PCA)
KW - Pulsed DC reactive magnetron sputtering
KW - Residual stress
KW - Response surface methodology (RSM)
UR - http://www.scopus.com/inward/record.url?scp=85123546414&partnerID=8YFLogxK
U2 - 10.1007/s00170-022-08714-2
DO - 10.1007/s00170-022-08714-2
M3 - 期刊論文
AN - SCOPUS:85123546414
SN - 0268-3768
VL - 119
SP - 7449
EP - 7462
JO - International Journal of Advanced Manufacturing Technology
JF - International Journal of Advanced Manufacturing Technology
IS - 11-12
ER -