Residual stress analysis for oxide thin film deposition on flexible substrate using finite element method

Hsi Chao Chen, Chen Yu Huang, Ssu Fan Lin, Sheng Hui Chen

研究成果: 書貢獻/報告類型會議論文篇章同行評審

1 引文 斯高帕斯(Scopus)

摘要

Residual or internal stresses directly affect a variety of phenomena including adhesion, generation of crystalline defects, perfection of epitaxial layers and formation of film surface growths such as hillocks and whiskers. Sputtering oxide films with high density promote high compressive stress, and it offers researchers a reference if the value of residual stress could be analyzed directly. Since, the study of residual stress of SiO2 and Nb2O5 thin film deposited by DC magnetron sputtered on hard substrate (BK7) and flexible substrate (PET and PC). A finite element method (FEM) with an equivalent-reference-temperature (ERT) technique had been proposed and used to model and evaluate the intrinsic strains of layered structures. The research has improved the equivalent reference temperature (ERT) technique of the simulation of intrinsic strain for oxygen film. The results have also generalized two models connecting to the lattice volume to predict the residual stress of hard substrate and flexible substrate with error of 3% and 6%, respectively.

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主出版物標題Advances in Optical Thin Films IV
DOIs
出版狀態已出版 - 2011
事件Advances in Optical Thin Films IV - Marseille, France
持續時間: 5 9月 20117 9月 2011

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
8168
ISSN(列印)0277-786X

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???event.eventtypes.event.conference???Advances in Optical Thin Films IV
國家/地區France
城市Marseille
期間5/09/117/09/11

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