Research of ZnS as a buffer layer for CIGS solar cells

Hsin Wei Huang, Sheng Hui Chen, Cheng Chung Lee

研究成果: 書貢獻/報告類型會議論文篇章同行評審


Normally, CdS film is used as the buffer layer in the fabrication of copper indium gallium selenide solar cells. These solar cells can reach an efficiency of 10.3% when produced by a non-vacuum process. However, this is a very toxic process. In this study, we propose using a nontoxic zinc sulfide (ZnS) buffer layer which is deposited by chemical bath deposition. It took only 15 minutes to reach a ZnS thickness of 50nm and the transmittance of the finished device was higher than 80%. The back contact of the Mo layer sheet resistivity is 0.22 (Ω/square). The precursor solution for the cell fabrication was prepared from anhydrous hydrazine. The film was then deposited by spraying and finally heated rapidly to 520 without external selenization.

主出版物標題Thin Film Solar Technology II
出版狀態已出版 - 2010
事件Thin Film Solar Technology II - San Diego, CA, United States
持續時間: 1 8月 20104 8月 2010


名字Proceedings of SPIE - The International Society for Optical Engineering


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國家/地區United States
城市San Diego, CA


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